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In-Situ Transmission Electron Microscopy Studies of the Oxidation of Si (111) 7X7
Published online by Cambridge University Press: 25 February 2011
Abstract
The kinematical approximation is valid for High-Energy Transmission Electron Diffraction from monolayers in planview. We use this fact to study quantitatively the attack of Si (111) 7×7 by 02. Oxygen is found to bind in the bridging position of the adatom backbonds and render the structure very stable during subsequent 02 exposure. Electron-beam exposure during dosing additionally creates rapid disordering which is presumed to represent SiOx formation.
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- Copyright © Materials Research Society 1990
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