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In-Situ Studies of Silicon Oxidation
Published online by Cambridge University Press: 21 February 2011
Abstract
Using a UHV transmission electron microscope we have examined the initial stages of Si oxidation. Using the surface-sensitive forbidden 1/3<422> reflection on Si (111) we have imaged surface steps at various stages of oxidation, including buried Si/SiO2 interface formation.
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- Copyright © Materials Research Society 1989