Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-06-26T03:54:12.747Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Spectroscopic Ellipsometry for the Control of Si based Thin Multi-Layers Grown by UHV-CVD

Published online by Cambridge University Press:  22 February 2011

F. Glowacki ,
A. Larre ,
F. Ferrieu ,
Y. Campidelli  and
D. Bensahel
F. Glowacki
Affiliation:
France Telecom, CNET-CNS, BP 98, 38243, Meylan-Cedex, France
A. Larre
Affiliation:
IEF, URA 22 CNRS, Universitµ Paris XI, Bat. 220, 91405, Orsay, France
F. Ferrieu
Affiliation:
France Telecom, CNET-CNS, BP 98, 38243, Meylan-Cedex, France
Y. Campidelli
Affiliation:
France Telecom, CNET-CNS, BP 98, 38243, Meylan-Cedex, France
D. Bensahel
Affiliation:
France Telecom, CNET-CNS, BP 98, 38243, Meylan-Cedex, France
Get access

Abstract

In-situ Spectroscopic Ellipsometry as a function of time is used to follow the growth of Si/SiGe Multi Quantum Well (MQW) structures. It provides both the starting surface control and the growth parameters understanding (thickness, growth rate, Ge content). Si and SiGe optical data were recorded at different temperatures on individual Si and SiGe layers. Using the measured indices and the known thicknesses of the layers, the experimental MQW data are fitted without adjustable parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 69
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Pickering, C., Carline, R.T., Robbins, D.J., Leong, W.Y., Barnett, S.J., Pitt, A.D., Cullis, A.G., J. Appl. Phys., 73, 239 (1993).Google Scholar
[2] Ferrieu, F., Beck, F., Dutartre, D., Sol. State Comm., 82, 427 (1992).Google Scholar
[3] Racanelli, M., Drowley, C.I., Theodore, N.D., Gregory, R.B., Thopkins, H.G., Meyer, D.J., Appl. Phys. Lett., 60, 2225 (1992).Google Scholar
[4] Sieg, R.M., Alterovitz, S.A., Croke, E.T., Harrell, M.J., Tanner, M., Wang, K.L., Mena, R.A., Young, P.G., J. Appl. Phys., 74, 586 (1993).CrossRefGoogle Scholar
[5] Humlicek, J., Garriga, M., Alonso, M.I., Cardona, M., J. Appl. Phys., 65, 2827 (1989).CrossRefGoogle Scholar
[6] Jellison, G.E. Jr, Haynes, T.E., Burke, H.H., Opt. Mat., 2, 105 (1993).Google Scholar
[7] Robbins, D.J., Cullis, A.G., Pidduck, A.J, J. Vac. Sci. Techno., B9(4), Jul/Aug. 2048 (1991).CrossRefGoogle Scholar
[8] Pickering, C., Hope, D.A.O., Leong, W.Y., Robbins, D.J., Greef, R., MRS Fall Meeting, Boston 1993, to be published in the proceedings.Google Scholar
[9] Pickering, C., Carline, R.T., Robbins, D.J., Leong, W.Y., Gray, D.E., Greef, R., Thin Solid Fims, 223, 126 (1993).Google Scholar
[10] Pickering, C., Thin Solid Films, 206, 275 (1991).Google Scholar
[11] Glowacki, F., Campidelli, Y., E-MRS, Strasbourg, May 1993, to be published in the proceedings.Google Scholar
[12] Boucaud, P., Glowacki, F., Ferrieu, F., Larré, A., Perio, A., Bensahel, D., to be published in Thin Solid Films.Google Scholar
[13] Glowacki, F., Larré, A., Campidelli, Y., Chollet, F., André, E., to be published.Google Scholar
[14] Aketagawa, K., Tatsumi, T., Sakai, J., J. Cryst. Growth, 111, 860 (1990).Google Scholar
[15] Regolini, J.L., Bensahel, D., Mercier, J., Scheid, E., J. Physique, C5–50, 519 (1989).Google Scholar
[16] Robbins, D.J., Glasper, J.L., Cullis, A.G., Leong, W.Y., J. Appl. Phys., 69, 3729 (1991).Google Scholar
[17] Carline, R.T., Pickering, C., Robbins, D.J., Leong, W.Y., Pitt, A.D., Cullis, A.G., Appl. Phys. Lett., 64, 1114 (1994).Google Scholar
[18] Regolini, J.L., Gisbert, F., Dolino, G., Boucaud, P., Mat. Lett., 18, 57 (1993).Google Scholar