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In-Situ Friction and Pad Topography Measurements During CMP

Published online by Cambridge University Press:  15 March 2011

Caprice Gray ,
Daniel Apone ,
Chris Barns ,
Moinpour Monsour ,
Sriram +Anjur' ,
Vincent Manno  and
Chris Rogers
Caprice Gray
Affiliation:
Tufts University, Medford, MA
Daniel Apone
Affiliation:
Tufts University, Medford, MA
Chris Barns
Affiliation:
Intel Corporation, Santa Clara, CA
Moinpour Monsour
Affiliation:
Intel Corporation, Santa Clara, CA
Sriram +Anjur'
Affiliation:
Cabot Microelectronics, Aurora, IL Materials Research Society, April 5, 2004
Vincent Manno
Affiliation:
Tufts University, Medford, MA
Chris Rogers
Affiliation:
Tufts University, Medford, MA
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Abstract

Duel Emission Laser Induced Fluorescence (DELIF) and friction measurements are taken in-situ during CMP to observe slurry flow beneath a model of an integrated circuit (IC) wafer. Friction measurements average around 7.5 lb and multiple frequencies are observed. Slurry film thicknesses on the order of a 10±3μm were observed during CMP of a flat wafer. The film thickness seems uncorrelated to friction measurements except when the pad and wafer rotation speeds are significantly slowed. DELIF has also accurately measured a 9μm etched step, with noise in the image equal to ±3 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 816: Symposium K – Advances in Chemical-Mechanical Polishing , 2004 , K5.4
Copyright
Copyright © Materials Research Society 2004

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