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In-Situ Electromigration Stressing in Transmission Electron Microscopy for Al-Cu Interconnects

Published online by Cambridge University Press:  21 February 2011

W. C. Shih  and
A.L. Greer
W. C. Shih
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
A.L. Greer
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
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Abstract

Unpassivated 2.1 μm wide Al-4wt%Cu interconnects with near-bamboo grain structure, are electromigration-tested to failure in-situ in transmission electron microscopy. Early stress-induced voids stop growing and are not fatal. Hillocking is associated with precipitates, fatal voiding with copper depletion. Electromigration-induced voids form at the upstream end of inclined grain boundaries. Healing events are analysed and it is shown that open-circuit failure can occur when the proximity of grain boundaries impairs the stress-driven healing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 417
Copyright
Copyright © Materials Research Society 1995

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