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Inner composition, defects and morphology of AlGaAs nanowires grown by Au-catalyzed MOVPE

Published online by Cambridge University Press:  08 July 2011

P. Prete ,
B. Buick ,
E. Speiser ,
N. Lovergine  and
W. Richter
P. Prete
Affiliation:
IMM-CNR, Lecce Research Unit, Lecce, Italy
B. Buick
Affiliation:
Physics Department, University of Rome ‘Tor Vergata’, Rome, Italy
E. Speiser
Affiliation:
Physics Department, University of Rome ‘Tor Vergata’, Rome, Italy
N. Lovergine
Affiliation:
Dept. of Innovation Engineering, University of Salento, Lecce, Italy
W. Richter
Affiliation:
Physics Department, University of Rome ‘Tor Vergata’, Rome, Italy
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Abstract

The inner composition, defect content and morphology of AlGaAs nanowires (NWs) grown on (111)B-GaAs by Au-catalyzed MOVPE is reported. The NWs grow tapered with their [111] axis normal to the substrate. The Raman spectra of single AlGaAs NWs were measured in non-resonant conditions with sub-μ-meter spatial resolution, allowing determination of the Al content. NWs consist of GaAs for TG<475°C, but show a two-fold compositional structure for TG >475°C, namely an AlxGa1-xAs core surrounded by an AlyGa1-yAs (y<x) shell, ascribed to the combination of Au-catalyzed (axial) and conventional (sidewall) growth. The cross-sectional shape of AlGaAs NWs changes from triangular (for TG=500÷525°C) to almost hexagonal (for TG=550°C), due to an exchange between and {110} planes as the slowest to grow. The NWs have free-electron concentrations ∼1018 cm-3, due to Si contamination of the Al source.

Keywords

nanostructuremetalorganic depositionRaman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1350: Symposium EE – Semiconductor Nanowires—From Fundamentals to Applications , 2011 , mrss11-1350-ee06-02
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Wu, Z. H., Sun, M., Mei, X. Y., and Ruda, H. E., Appl. Phys. Lett. 85 657 (2004).Google Scholar
2. Chen, C., Shehata, S., Fradin, C., LaPierre, R., Couteau, C. and Weihs, G., Nano Lett. 7, 2584 (2007).Google Scholar
3. Ouattara, O., Mikkelsen, A., Skold, N., Eriksson, J., Knaapen, T., Cavar, E., Seifert, W., Samuelson, L., and Lundgren, E., Nano Lett. 7, 2859 (2007).Google Scholar
4. Lim, K., Tambe, M. J., Brewster, M. M., and Gradečak, S., Nano Lett. 8, 1386 (2008).Google Scholar
5. Paiano, P., Prete, P., Lovergine, N., and Mancini, A. M., J. Appl. Phys. 100, 094305 (2006).Google Scholar
6. Buick, B., Paiano, P., Prete, P., Speiser, E., Lovergine, N., and Richter, W., Phys. Stat. Sol. (b) 247, 2027 (2010).Google Scholar
7. Speiser, E., Buick, B., Del, S. Gobbo, and Richter, W., Epioptics-9, Procs. 38th Course of the International School of Solid State Physics, Erice, Italy, Ed. A. Cricenti (World Scientific, Singapore , 2008), p. 82.Google Scholar
8. Casiraghi, C., Hartschuh, A., Lidorikis, E., Qian, H., Harutyunyan, H., Gokus, T., Novoselov, K. S., and Ferrari, A. C., Nano Lett. 7, 2711 (2007).Google Scholar
9. Prete, P., Marzo, F., Paiano, P., Lovergine, N., Salviati, G., Lazzarini, L., and Sekiguchi, T., J. Cryst. Growth 310, 5114 (2008).Google Scholar
10. Altamura, D., Miccoli, I., Prete, P., Lovergine, N., and Tapfer, L., Procs. MRS Spring Meeting 2011, Symp. EE. Google Scholar
11. Prete, P., Buick, B., Paiano, P., Lovergine, N., and Richter, W, to be reported elsewhere.Google Scholar
12. Saint-Cricq, N., Carles, R., Renucci, J. B., Zwick, A., and Renucci, M. A., Solid State Commun. 39, 1137 (1981).Google Scholar
13. Jusserand, B., and Sapriel, J., Phys. Rev. B 24, 7194 (1981).Google Scholar
14. Yuasa, T., Naritsuka, S., Mannoh, M., Shinozaki, K., Yamanaka, K., Nomura, Y., Mihara, M., and Ishii, M., Phys. Rev. B 33 1222 (1986).Google Scholar
15. Yuasa, T., Naritsuka, S., Mannoh, M., Shinozaki, K., Yamanaka, K., Nomura, Y., Mihara, M., and Ishii, M., Appl. Phys. Lett. 46, 176 (1985).Google Scholar
16. Lockwood, D. J., and Wasilewski, Z.R., Phys. Rev. B 70, 155202 (2004).Google Scholar
17. Wolf, D., Lichte, H., Pozzi, G., Prete, P., and Lovergine, N., submitted to Appl. Phys. Lett. Google Scholar