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Initial Stages of GaAs Epitaxy on Si

Published online by Cambridge University Press:  28 February 2011

O. K. Biegelsen ,
F. A. Ponce ,
B. S. Krusor ,
J. C. Tramontana ,
R. D. Yingling ,
R. D. Bringans  and
D. B. Fenner
O. K. Biegelsen
Affiliation:
Xerox Palo Alto Research Center Palo Alto, California 94304
F. A. Ponce
Affiliation:
Xerox Palo Alto Research Center Palo Alto, California 94304
B. S. Krusor
Affiliation:
Xerox Palo Alto Research Center Palo Alto, California 94304
J. C. Tramontana
Affiliation:
Xerox Palo Alto Research Center Palo Alto, California 94304
R. D. Yingling
Affiliation:
Xerox Palo Alto Research Center Palo Alto, California 94304
R. D. Bringans
Affiliation:
Xerox Palo Alto Research Center Palo Alto, California 94304
D. B. Fenner
Affiliation:
Xerox Palo Alto Research Center Palo Alto, California 94304
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Abstract

The initial stages of heteroepitaxial growth of GaAs on Si have been observed using a technique of graded-thickness sample deposition. We find that an initial uniform passivating layer is grown, followed by three-dimensional nucleation determined by Ga diffusion and clustering, followed in turn by an interfacial reaction limited island growth mechanism. Results for various substrate temperatures and substrate orientations are consistent with the simple models of nucleation and growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 33
Copyright
Copyright © Materials Research Society 1988

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