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InGaAs/GaAsSb Heterostructures: Aluminum-Free Intersubband Devices

Published online by Cambridge University Press:  31 January 2011

Michele Nobile ,
Gottfried Strasser ,
Hermann Detz ,
Elvis Mujagic ,
Aaron Andrews ,
Pavel Klang  and
Werner Schrenk
Michele Nobile
Affiliation:
michele.nobile@tuwien.ac.at, Institute for Solid State Electronics, Vienna University of Technology, Center for Micro-and Nanostructures, Vienna, Austria
Gottfried Strasser
Affiliation:
gs48@buffalo.edu
Hermann Detz
Affiliation:
hermann.detz@tuwien.ac.at, Institute for Solid State Electronics, Vienna University of Technology, Center for Micro-and Nanostructures, Vienna, Austria
Elvis Mujagic
Affiliation:
elvis.mujagic@tuwien.ac.at, Institute for Solid State Electronics, Vienna University of Technology, Center for Micro-and Nanostructures, Vienna, Austria
Aaron Andrews
Affiliation:
aaron.maxwell.andrews@tuwien.ac.at, Institute for Solid State Electronics, Vienna University of Technology, Center for Micro-and Nanostructures, Vienna, Austria
Pavel Klang
Affiliation:
pavel.klang@tuwien.ac.at, Institute for Solid State Electronics, Vienna University of Technology, Center for Micro-and Nanostructures, Vienna, Austria
Werner Schrenk
Affiliation:
werner.schrenk@tuwien.ac.at, Institute for Solid State Electronics, Vienna University of Technology, Center for Micro-and Nanostructures, Vienna, Austria
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Abstract

An experimental study on mid-infrared intersubband absorption in InGaAs/GaAsSb multiple quantum wells grown lattice-matched to InP substrates by molecular beam epitaxy is presented. Intersubband absorption in a broad wavelength region (5.8 - 11.6 μm) is observed in multiple quantum well samples with well widths ranging between 4.5 and 12 nm. A conduction band offset at the InGaAs/GaAsSb heterointerface of 360 meV gives an excellent agreement between the theoretically calculated ISB transition energies and the Fourier-transform infrared spectroscopy measurements over the whole range of well widths under investigation. Two kinds of intersubband devices based on the InGaAs/GaAsSb material system are presented: a quantum well infrared photodetector operating at a wavelength of 5.6μm and an aluminum-free quantum cascade laser. The presented quantum cascade laser emits at a wavelength of 11.3 μm, with a threshold current density of 1.7 kA/cm2 at 78 K.

Keywords

III-Vmolecular beam epitaxy (MBE)laser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B11-01
Copyright
Copyright © Materials Research Society 2010

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