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Infrared Emission Spectra of Indium Phosphide at Elevated Temperatures

Published online by Cambridge University Press:  10 February 2011

H. Rogne ,
P. J. Timans  and
H. Ahmed
H. Rogne
Affiliation:
SINTEF Electronics and Cybernetics, Microsystems, Forskningsveien 1, 0314 Oslo, Norway.
P. J. Timans
Affiliation:
AG Associates, 4425 Fortran Drive, San Jose, CA95134-2300, USA.
H. Ahmed
Affiliation:
Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 OHE, UK.
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Abstract

Process monitoring and control during semiconductor device fabrication frequently relies on good knowledge of the optical properties of the substrate wafer and the surface coatings. However, these optical data are often unavailable, and as a consequence errors arise in pyrometric temperature measurements, as well as in thermal modelling of heating cycles. In this study, isothermal electron beam heating has been combined with in situ optical measurements to record thermal emission spectra of undoped InP specimens from 347 to 478°C, at wavelengths between I and 9 μm. The absorption coefficient was deduced from the emission spectra and reveals information about the temperature dependence of the infrared absorption mechanisms in InP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 502: Symposium II – In Situ Process Diagnostics & Intelligent Materials Processing , 1997 , 83
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Timans, P. J., in Advances in Rapid Thermal and Integrated Processing, ed. F., Roozeboom, ch. 2, pp. 35–101 (Kluwer Academic Publishers, Dordrecht, The Netherlands, 1996).Google Scholar
2. Timans, P. J., J. Appl. Phys. 72, 660 (1992).Google Scholar
3. Timans, P. J., J. Appl. Phys. 74, 6353 (1993).Google Scholar
4. Rogne, H., Timans, P. J., and Ahmed, H., Appl. Phys. Lett. 69, 2190 (1996).Google Scholar
5. Olson, G. L., and Roth, J. A., Mater. Sci. Rep. 3, 1 (1988).Google Scholar
6. Dilhac, J. M., Ganibal, C., Nolhier, N. and Rousset, B., Rev. Sci. Instrum. 63, (1988).Google Scholar
7. Sato, T., Jap. J. Appl. Phys. 6, 339 (1967).Google Scholar
8. Li, H. H., J. Phys. Chem. Ref. Data 9, 561 (1980).Google Scholar
9. McCaulley, J. A., Donnelly, V. M., Vernon, M., and Taha, I., Phys. Rev. 49, 7408 (1994).Google Scholar
10. Adachi, S., J. Appl. Phys. 66, 6030 (1989).Google Scholar
11. Rogne, H., Ph.D. Thesis, University of Cambridge (1997).Google Scholar
12. Chen, A. B., and Sher, A., Semiconductor Alloys, Plenum Press (1995).Google Scholar
13. Zach, F. X., and Winnacker, A., Jap. Journ. Appl. Phys. 28, 957 (1989).Google Scholar
14. Martin, G. M., Appl. Phys. Lett. 39, 747 (1981).Google Scholar
15. Haga, E., and Kimura, H., Journ. Phys. Soc. Jpn. 19, 1596 (1964).Google Scholar