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The Influence of Thermal Treatment on Defect Characteristics in Cz-Silicon Wafers Investigated by Positron Annihilation Spectroscopy

Published online by Cambridge University Press:  03 September 2012

P. Mascher ,
W. Puff ,
S. Hahn ,
K. H. Cno  and
B. Y. Lee
P. Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7
W. Puff
Affiliation:
Institut für Kernphysik, Technische Universität Graz, Graz, Austria
S. Hahn
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
K. H. Cno
Affiliation:
Siltron Inc., #283 Imsoodong, Gumi Kyungsangbukdo, Korea
B. Y. Lee
Affiliation:
Siltron Inc., #283 Imsoodong, Gumi Kyungsangbukdo, Korea
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Abstract

Positron lifetime and Doppler-broadening experiments as well as Fourier-transform infrared spectroscopy (FTIR) were performed on a variety of six-inch Czochralski (CZ) silicon wafers. Measurements were done at 14 equidistant locations across the wafers which were cut from the seed-, middle-, and tail-sections of two boules grown at different pull-speeds.

In the as-grown wafers, the positron response consisted of components from small oxygen-related clusters and “perfect” bulk silicon only. Possible contributions from vacancy-type defects were at or just below the detection limit. After a two-step heat treatment (750°C/ 4 hrs + 1050°C/6 hrs in N2) FTIR showed that significant amounts of oxygen (4–8 ppma) had precipitated in wafers taken from the seed-sections of the boules but not in any of the other wafers. The positron data did not reflect this distinctive difference, however, both lifetime and Doppler-broadening results strongly indicate the creation of vacancy-type defects at concentrations in the 1016cm−3-range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 665
Copyright
Copyright © Materials Research Society 1992

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References

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