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Influence of the Surface Depletion Layer on the Photoetching Rate at Growth Striations in Lec GaAs.

Published online by Cambridge University Press:  28 February 2011

C. Frigeri ,
J. L. Weyher  and
L. Zanotti
C. Frigeri
Affiliation:
CNR-MASPEC Institute, via Chiavari 18/A, 43100 Parma, Italy
J. L. Weyher
Affiliation:
Catholic University, RIM, Toernooiveld, 6525 ED Nijmegen, The Netherlands
L. Zanotti
Affiliation:
CNR-MASPEC Institute, via Chiavari 18/A, 43100 Parma, Italy
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Abstract

Quantitative energy-dependent EBIC measurements have been used to calibrate the photoetching rate in HF-CrO3 aqueous solutions (DSL method: Diluted Sirtl-like etching with the use of Light) as a function of dopant concentration in LEC grown n-type GaAs samples containing growth striations. The relative DSL etching rate depends on the width of the surface depletion region associated with the semiconductor-etching solution interface, i. e. greater etch rates correspond to smaller dopant concentrations. These results are in agreement with the electrochemical model of GaAs etching in the DSL etching system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 138: Symposium Q – Characterization of the Structure and Chemistry of Defects in Materials , 1988 , 527
Copyright
Copyright © Materials Research Society 1989

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