The relaxation of thermal stresses during the Czochralsky growth leads to frozen in deformations in the boules. These deformations lead to a nonintentional inhomogeneous miscut of the wafers. From the X-ray double crystal measurement of frozen in deformations in GaAs bulk crystals a nonintentional miscut of about 10−4 may be estimated. The measurement of the misorientation distribution over a LEC GaAs wafer yielded even higher inhomogeneities which are believed to be due to local curvature of the lcm2 samples. The relaxation of GaAs/AlAs Braggreflectors of 3μm overall thickness depends on the density of threading dislocations i.e. of the type of substrate (LEC or HB). The inhomogeneous strain field of misfit dislocations in InGaAs/GaAs multilayer systems and their inhomogeneous distribution leads to deformations in epitaxial layers limiting the dimensions of coherently scattering domains. The resulting mosaic spread in the epitaxial layer systems has been obtained using triple crystal measurements. The experimentally determined mosaic spread has to be taken into account to simulate the the diffraction pattern more correctly.