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Influence of the Nano-mesh Metal Electrode to Light Excitation of Carriers in Semiconductor

Published online by Cambridge University Press:  12 July 2012

Kumi Masunaga
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan
Kenji Nakamura
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan
Ryota Kitagawa
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan
Eishi Tsutsumi
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan
Tsutomu Nakanishi
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan
Akira Fujimoto
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan
Hideyuki Nishizawa
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan
Koji Asakawa
Affiliation:
Corporate Research and Development Center, Toshiba Corporation, 1, Komukai-Toshiba-cho, Saiwai-ku, Kawasaki, 212-8582, Japan
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Abstract

A thin metal film with nano-apertures, called “nano-mesh electrode,” generates near-field lights near the electrode. We investigated carrier excitations in semiconductors by the near-field light. Finite-difference time-domain (FDTD) method revealed that when the infrared light irradiates the Au nano-mesh electrode on Ge, near-field lights are generated and absorbed in the surface region of the Ge. In order to measure the photocurrent involved by near-filed lights, we fabricated a Schottky cell and applied a Au nano-mesh electrode on the n-type Ge. The efficiency of the Schottky cell with the Au nano-mesh electrode improved in infrared region compared to plain the Au-film Schottky cell. The agreement between theoretical simulations and experiments indicates that near-field lights enhance the carrier excitation in the semiconductor.

Type
Articles
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Pelletier, V., Asakawa, K., Wu, M., Adamson, D. H., Reg-ister, R. A. and Chaikin, P. M., Applied Physics Letters, 88 (2006) 211114.Google Scholar
2. Asakawa, K. and Fujimoto, A., Applied Optics, 44 (2005) 7475.Google Scholar
3. Nakanishi, T., et al. ., Microelectronic Engineering, 83 (2006) 1503.Google Scholar
4. Tsutsumi, E., et al. ., Proceedings of the 23rd International Mi-croprocess and Nanotechnology Conference (2010) 11B-4–3.Google Scholar
5. Genet, C. and Ebbesen, T. W., Nature, 445 (2007) 39.Google Scholar
6. Atwater, H. A. and Polman, A., Nature materials, 9 (2010) 205.Google Scholar
7. Penchina, C. M., Phys. Rev. 138 (1965) A924.Google Scholar
8. Ebbesen, T. W., et al. ., Nature, 391 (1998) 668.Google Scholar
9. Macfarlane, G.G., Phys. Rev. 111 (1958) 1245.Google Scholar