Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-25T10:50:42.850Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of the Implanted Species on the Residual Damage After Hot Implants in Silicon

Published online by Cambridge University Press:  25 February 2011

L. Calcagno ,
C. Spinella ,
M. Catania ,
S. U. Campisano ,
G. Foti ,
G. Ferla  and
E. Rimini
L. Calcagno
Affiliation:
Dipartimento di Fisica, Corso Italia 57-95129 Catania (Italy)
C. Spinella
Affiliation:
Dipartimento di Fisica, Corso Italia 57-95129 Catania (Italy)
M. Catania
Affiliation:
Dipartimento di Fisica, Corso Italia 57-95129 Catania (Italy)
S. U. Campisano
Affiliation:
Dipartimento di Fisica, Corso Italia 57-95129 Catania (Italy)
G. Foti
Affiliation:
Dipartimento di Fisica, Corso Italia 57-95129 Catania (Italy)
G. Ferla
Affiliation:
SGS-Thompson, Stradale Primosole 50-95100 Catania (Italy)
E. Rimini
Affiliation:
Dipartimento di Fisica, Corso Italia 57-95129 Catania (Italy)
Get access

Abstract

Damage formation during hot implants of 600 keV As or Ge ions into Si was investigated by changing the target temperature (>150 °C) and the ion fluence. The defect distributions, as obtained by channeling analysis, are characterized by a gaussian shape whose maximum coincide with the peak of the energy density deposition and with a width of 200 nm. The amount of damage is a factor of two higher for Ge than for As ion implants, and a similar result was found for the damage created by Ge implants into bare Si or Si doped with a near constant As concentration of 2×10 20/cm3. The transition to amorphous formation is quite sharp for As (around 120 °C) and quite broad for Ge implants. The different amount and kind of extended defects is probably due to an interaction of the mobile point defects, vacancies and interstitials, with As. The interaction probably increases the defects annihilation rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 581
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Moheread, F.F., Crowder, B.L.; Rad.Eff. 6(1970)27 Google Scholar
2. Poate, J.M. and Williams, J.S.; Ion implantation and beam processing (Academic Press, New York 1984) cap.2-pag.13Google Scholar
3. J.S.Williams Elliman, R.G., Brown, W.L. and Seidel, T.E.; Phys.Rev.Lett. 55(1985)1482 Google Scholar
4. Olson, G.L.; Mater. Res.Soc.Symp. Proc. 35 (Mat.Res.Soc. Pittsburg USA 1985)p.25 Google Scholar
5. Ferla, A. La, Rimini, E., and Ferla, G.; Appl.Phy.Lett. 52(1988)712 Google Scholar
6. Seidel, T.E., Lischner, D.J., Pai, C.S., Knoell, R.V., Meher, D.H. and Jacobson, D.C.; Nucl. Instr.Meth. B7/8(1985)251 Google Scholar
7. Coffa, S., Calcagno, L., Spinella, C., Campisano, S.U., Foti, G. and Rimini, E.; Nucl.Instr.Meth. (In Press)Google Scholar
8. Beanland, D.G., in: Ion implantation and beam processing eds.Williams, J.S. and Poate, J.M. (Academic Press, New York) (1984)p.261 Google Scholar
9. Feldman, L.C., Mayer, J.W. and Picraux, S.T.; Material Analysis by ion channeling (Academic Press, New York, 1982) ch.4–5Google Scholar
10. Foti, G., Picraux, S.T., Campisano, S.U. and Rimini, E. Phys. Rev. B18(1978)2078 Google Scholar
11. Dvurechenskii, A.V., Groetrchel, R. and Popov, V.P.; Phys. Lett. A116(1986)399 Google Scholar