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The Influence of Target-Substrate Bias on Pulsed Laser Deposited Yba2Cu307-6

Published online by Cambridge University Press:  28 February 2011

D.B. Chrisey ,
J.S. Horwitz ,
K.S. Grabowski ,
M.E. Reeves ,
M.S. Osofsky  and
C.R. Gossett
D.B. Chrisey
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375‐5000
J.S. Horwitz
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375‐5000
K.S. Grabowski
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375‐5000
M.E. Reeves
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375‐5000
M.S. Osofsky
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375‐5000
C.R. Gossett
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375‐5000
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Abstract

We have deposited YBa2Cu307.$ thin films onto <100> SrTi03 substrates at 700°C as a function of target‐substrate bias (0 to 300 V) in order to make use of the positive ions in the laser produced plume to assist in the deposition. The films were extensively characterized to determine differences in film properties (composition, structure, and transport). The results suggest that film properties were optimized at or near a target‐substrate bias of 100 V, although, the differences in film properties were within the margin of reproducibility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 435
Copyright
Copyright © Materials Research Society 1990

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References

1 Inam, A., Hegde, M.S., Wu, X.D., Venkatesan, T., England, P., Miceli, P.F., Chase, E.W., Chang, C.C., Tarascon, J.M. and Wachtman, J.B., Appl. Phys. Lett. 53 908 (1988).Google Scholar
2 Roas, B., Schultz, L. and Endres, G., Appl. Phys. Lett. 53 1557 (1989).Google Scholar
3 Zheng, J.P., Huang, Z.Q., Shaw, D.T., and Kwok, H.S., Appl. Phys. Lett. 54 280 (1989).Google Scholar
4 Venkatesan, T., Wu, X.D., Inam, A., Jeon, Y., Croft, M., Chase, E.W., Chang, C.C., Wachtman, J.B., Odom, R.W., Radicati di Brozolo, F., and Magee, C.A., Appl. Phys. Lett. 53 1431 (1988).Google Scholar
5 Witanchchi, S., Kwok, H.S., Wang, X.W., and Shaw, D.T., Appl. Phys. Lett. 53 234 (1988).Google Scholar
6 Singh, R.K., Narayan, J., Singh, A.K., and Krishnaswamy, J., Appl. Phys. Lett. 54 2271 (1989).Google Scholar
7 Hubler, G.K., Carosella, C.A., Donovan, E.P., Van Vechten, D., Bassel, R.H., Andreadis, T.D., Rosen, M., and Mueller, G.P., Nucl. Instr. and Meth. (in press).Google Scholar
8 Grabowski, K.S., Chrisey, D.B., Horwitz, J.S., Osofsky, M.S., and Gossett, C.R. (in preparation).Google Scholar
9 Classsen, J.H., IEEE Trans, on Mag. 21 2233 (1989).Google Scholar
10 Venkatesan, T., Wu, X.D., Inam, A., and Wachtman, J.B., Appl. Phys. Lett. 52 (1988) 1193.Google Scholar
11 Brighton, D.R. and Hubler, G.K, Nucl. Instr. and Meth. B28 527 (1987).Google Scholar
12 Hirsch, E.H. and Varga, I.K., Thin Sol. Films 69 (1980) 99; E.H. Hirsch and I.K. Varga, Thin Sol. Films 52 (1978) 445.Google Scholar