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The Influence of Substrate Surface Polarity on Optical Properties of GaN Grown on Single Crystal Bulk AlN

Published online by Cambridge University Press:  11 February 2011

G. Tamulaitis ,
I. Yilmaz ,
M. S. Shur ,
R. Gaska ,
C. Chen ,
J. Yang ,
E. Kuokstis ,
A. Khan ,
J. C. Rojo  and
L. J. Schowalter
G. Tamulaitis
Affiliation:
Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A IMSAR, Vilnius University, Sauletekio 9-III, Vilnius, Lithuania
I. Yilmaz
Affiliation:
Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A
M. S. Shur
Affiliation:
Department of ECE and CIE, Rensselaer Polytechnic Institute, Troy, NY 12180, U.S.A
R. Gaska
Affiliation:
Sensor Electronic Technology, Inc., Latham, NY 12110, U.S.A.
C. Chen
Affiliation:
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
J. Yang
Affiliation:
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
E. Kuokstis
Affiliation:
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
A. Khan
Affiliation:
Department of EE, University of South Carolina, Columbia, SC 29208, U.S.A.
J. C. Rojo
Affiliation:
Crystal IS, Inc., Latham, NY 12110, U.S.A.
L. J. Schowalter
Affiliation:
Crystal IS, Inc., Latham, NY 12110, U.S.A.
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Abstract

Photoluminescence of the GaN layers grown both on N-face and Al-face bulk AlN is studied under CW and pulsed laser excitation in the temperature range from 8 K to 300 K. We compare localization of excitons, residual strain, and activation energies for thermally activated transfer of carriers to nonradiative recombination. At high excitation intensities, conditions for carrier heating, which is important for the threshold of stimulated emission, are also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.34
Copyright
Copyright © Materials Research Society 2003

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References

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