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Influence of Substrate Annealing Temperature upon Deep Levels in n-Type 4H SiC

Published online by Cambridge University Press:  17 March 2011

Martin E. Kordesch ,
Florentina Perjeru  and
R. L. Woodin
Martin E. Kordesch
Affiliation:
Department of Physics and Astronomy, Athens OH 45701
Florentina Perjeru
Affiliation:
Department of Physics and Astronomy, Athens OH 45701
R. L. Woodin
Affiliation:
Extreme Devices, Inc., Austin TX 78744
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Abstract

The evolution of deep levels that depend upon annealing temperature is investigated for n-type 4H SiC-Ni Schottky barriers. Several samples, cut from the same wafer, have been left unheated or annealed at 400°C, 700°C and 900°C, in air. Deep level transient spectroscopy (DLTS) has been used to investigate deep levels in all four sets of samples. Electron traps with activation energies EC-ET = 0.19 to 0.5 eV are observed, as well as a hole trap in the sample annealed at 900°C at energy ET-EV = 0.14 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 699: Symposium R – Electrically Based Microstructural Characterization III , 2001 , R3.7
Copyright
Copyright © Materials Research Society 2002

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