Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-20T00:16:09.857Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Strontium Concentration on the Microstructure and Electrical Properties of Sol-Gel Derived Barium Strontium Titanate Thin Films

Published online by Cambridge University Press:  10 February 2011

M.C. Gust ,
L.A. Momoda  and
M.L. Mecartney
M.C. Gust
Affiliation:
Department of Chemical Engineering, University of California, Irvine, CA 92717
L.A. Momoda
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Rd., Malibu, CA 90265
M.L. Mecartney
Affiliation:
Department of Chemical Engineering, University of California, Irvine, CA 92717
Get access

Abstract

BaxSrl−xTiO3 thin films with varying Sr concentration were prepared on Pt coated Si substrates using methoxypropoxide based alkoxide precursors. Films were crystallized by heat treating at 700°C for 30 minutes in an oxygen atmosphere after deposition of each layer. Film thickness ranged from 230 to 260 nm. No evidence of tetragonality was observed in any of the compositions. Films with higher Sr concentrations had a larger average grain size, larger grain size distribution, and increased (111) orientation on (111) oriented Pt. The highest dielectric constant of ˜400 was found for Ba 0.5Sr0.5TiO3, although no direct correlation could be made between the composition and dielectric properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 27
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Parker, L.H. and Tasch, A.F., IEEE Circuits and Devices Mag. 6 [1] 17–26 (1990).Google Scholar
2. Tsu, R., Hung-Yu, L., Wei-Yung, H., Summerfelt, S., Aoki, K., and B. Gnade in Ferroelectric Thin Films IV, edited by Tuttle, B.A., Desu, S.B., Ramesh, R., and Shiosaki, T. (Mater. Res. Soc. Proc. 361, Pittsburgh, PA, 1995) pp. 275–80.Google Scholar
3. Catalan, A.B., Mantese, J.V., Micheli, A.L., Schubring, N.W., and Poisson, R.J., J. Appl. Phys. 76 [4] 2541–43 (1994).Google Scholar
4. Wu, Y., Jacobs, E.G., Pinizzotto, R.F., Tsu, R., Liu, H.-Y., Summerfelt, S.R., and Gnade, B.E. in Ferroelectric Thin Films IV, edited by Tuttle, B.A., Desu, S.B., Ramesh, R., and Shiosaki, T. (Mater. Res. Soc. Proc. 361, Pittsburgh, PA, 1995) pp. 269–74.Google Scholar
5. Tahan, D., Safari, A., and Klein, L.C. in ISAF ‘94, edited by Pandey, R.K., Liu, M., and Safari, A. (Proc. 9th IEEE Inter. Symp. Appl. Ferroelectrics, New York, NY, 1994) pp. 427–30.Google Scholar
6. Sedlar, M., Sayer, M., and Weaver, L., J. Sol-Gel Sci. and Tech. 5 [3] 201–10 (1995).Google Scholar
7. Kim, J., Kwun, S.I., and Yoon, J.G. in ISAF ‘94, edited by Pandey, R.K., Liu, M., and Safari, A. (Proc. 9th IEEE Inter. Symp. Appl. Ferroelectrics, New York, NY, 1994) pp. 423–26.Google Scholar
8. Frey, M.H. and Payne, D.A., Appl. Phys. Lett. 63 [20] 2753–55 (1993).Google Scholar
9. Arlt, G., Hennings, D., and With, G. de, J. Appl. Phys. 58 [4] 1619–25 (1985).Google Scholar
10. Kawano, H., Morii, K., and Nakayama, Y., J. Appl. Phys. 73 [10] 5141–46 (1993).Google Scholar
11. Syamaprasad, U., Galgali, R.K., and Mohanty, B.C., Mater. Lett. 7 [5,6] 197–200 (1988).Google Scholar
12. Yamamichi, S., Sakuma, T., Hase, T., and Miyasaka, Y. in Ferroelectric Thin Films II, edited by Kingon, A.I., Myers, E.R., and Tuttle, B. (Mater. Res. Soc. Proc. 243, Pittsburgh, PA, 1992) pp. 297–302.Google Scholar