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The Influence Of Stress on The Growth of Titanium Silicide Thin Films on (001) Silicon Substrates

Published online by Cambridge University Press:  10 February 2011

S. L. Cheng ,
S. M. Chang ,
H. Y. Huang ,
Y. C. Peng ,
L. J. Chen ,
B. Y Tsui ,
C. J. Tsai  and
S. S. Guo
S. L. Cheng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, ljchen@mse.nthu.edu.tw
S. M. Chang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, ljchen@mse.nthu.edu.tw
H. Y. Huang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, ljchen@mse.nthu.edu.tw
Y. C. Peng
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, ljchen@mse.nthu.edu.tw
L. J. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China, ljchen@mse.nthu.edu.tw
B. Y Tsui
Affiliation:
Electronics Research and Service Organization, Industrial Technology and Research Institute, Hsinchu, Taiwan, Republic of China
C. J. Tsai
Affiliation:
Institute of Materials Engineering, National Chung Hsing University, Taichung, Taiwan, Republic of China
S. S. Guo
Affiliation:
Institute of Materials Engineering, National Chung Hsing University, Taichung, Taiwan, Republic of China
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Abstract

The influence of stress on the enhanced formation of C54-TiSi2 phase has been investigated. Tensile stress induced by backside CoSi2 film on the silicon substrate has been found to enhance the growth of C54-TiSi2 on (001)Si. The thickness of amorphous interlayers (a-interlayers) between Ti films and silicon substrates was found to be thicker and thinner in the tensilly and compressively stressed samples, respectively. From auto-correlation function analysis, the thicker a-interlayer was found to consist of a higher density of crystallites. The crystallites provide nucleation sites for C49-TiSi2 and facilitate the formation of C49-TiSi2 of small size. The larger total area of C49-TiSi2 grain boundaries supplies more nucleation sites for the phase transformation of C49- to C54-TiSi2. Therefore, the tensile stress present in the silicon substrate promotes the formation of a-interlayer and decreases the grain size of C49- TiSi2, which increases the nucleation density of the C54-TiSi2 phase. As a result, the transformation of C49- to C54-TiSi2 phase is enhanced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 9
Copyright
Copyright © Materials Research Society 1999

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References

1. Gambino, J. P. and Colgan, E. G., Mater. Chem. Phys. 52, 99 (1998).10.1016/S0254-0584(98)80014-XGoogle Scholar
2. Hsu, H. F., Chen, L. J., and Chu, J. J., J. Appl. Phys. 69, 4282 (1991).10.1063/1.348400Google Scholar
3. Yew, J. Y, Chen, L. J., and Nakamura, K., Appl. Phys. Lett. 69, 999 (1996).10.1063/1.117108Google Scholar
4. Chang, C. S., Nieh, C. W., and Chen, L. J., Appl. Phys. Lett. 50, 259 (1987).10.1063/1.98218Google Scholar
5. Chang, S. M., Huang, H. Y., Yang, H. Y., and Chen, L. J., Appl. Phys. Lett. 74, 224 (1999).10.1063/1.123300Google Scholar
6. Tung, R. T., Fujii, K., Kikuta, K., Chikaki, S., and Kikkawa, T., Appl. Phys. Lett. 70, 2386 (1997).10.1063/1.118880Google Scholar
7. Cheng, S. L., Huang, H. Y., Peng, Y. C., Chen, L. J., Tsui, B. Y., Tsai, C. J., and Guo, S. S., Appl. Phys. Lett. 74, 1406 (1999).10.1063/1.123565Google Scholar
8. Liang, J. M. and Chen, L. J., Appl. Phys. Lett. 64, 1224 (1994).10.1063/1.110846Google Scholar
9. Chen, J. C., Shen, G. H., and Chen, L. J., J. Appl. Phys. 84, 6083 (1998).10.1063/1.368920Google Scholar
10. Murarka, S. P., Metallization: Theory and Practice for VLSI and ULSI, (Butterworth-Heinemann, Boston, 1993) p. 74.Google Scholar