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The Influence of Predeposition of Nonolayer Thin Titanium Filns Upon the Crystallography of Subsequently Formed Pd2Si Layers on (100) Silicon

Published online by Cambridge University Press:  25 February 2011

J. T. McGinn ,
D. M. Hoffman ,
J. H. Thomas, III  and
F. J. Tams III
J. T. McGinn
Affiliation:
RCA Laboratories, Princeton, NJ 08540
D. M. Hoffman
Affiliation:
RCA Laboratories, Princeton, NJ 08540
J. H. Thomas, III
Affiliation:
RCA Laboratories, Princeton, NJ 08540
F. J. Tams III
Affiliation:
RCA Laboratories, Princeton, NJ 08540
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Abstract

This paper reports upon a new technique for the formation of epitaxial Pd2Si on (100) silicon using thin predeposited titanium layers. Improvements in the quality of epitaxy in Pd2Si on {111} silicon by this technique will also be shown. A preliminary model for the formation of epitaxy will be given. Discrepancies between this model and results in the literature will be discussed and experiments suggested to resolve the uncertainties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 83: Symposium J – Physical and Chemical Properties of Thin Metal Overlayers and Alloy Surfaces , 1986 , 231
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

[1] Fung, M. S., Cheng, H. C., and Chen, L. J., Appl. Phys. Lett., 42 (1985), 21 Google Scholar
[2] Furukawa, S. and Ishiwara, H., Jap. J. Appl. Phys., 22 Supplement 22–1, (1983), 21CrossRefGoogle Scholar
[3] Vaidya, S. and Smith, A. K., Thin Solid Films, 7–5, (1981), 253 Google Scholar
[4] Babcock, S.E. and Tu, K.N., J. Appl. Phys., 53 (1982), 6898 Google Scholar
[5] Tu, K.N., Jap. J. Appl. Phys, 22 (1983), 147 Google Scholar
[6] Gibson, J.M., Poate, J.M., and Tung, R.T., Thin Solid Films, 93 (1982), 99 Google Scholar
[7] Foll, H., Ho, P.S., and Tu, K.N., Phil. Mag., 45, (1982), 31 Google Scholar
[8] Mauarka, S., Silicides for VLSI Applications, Academic Press, New York, (1983)Google Scholar
[9] Jastrzebski, L., J. Cryst. Growth, 70, (1984), 253 Google Scholar
[10] Hensel, J.C., Levi, A.E. J., Tung, R.T., and Gibson, J.M., Appl. Phys. Lett., 47, (1985), 151 CrossRefGoogle Scholar
[11] Lewis, N., Hall, E.L., Hunt, B.D., and Schowalter, L.J., Proc. Electron Microscopy Soc. of Amer. 1986, ed. by Bailey, G.W. Google Scholar
[12] Walser, R.M. and Bene, R.W., Appl. Phys. Lett., 28, (1976) , 624 Google Scholar
[13] Tsaur, B.Y., Lau, S.S., Mayer, J.W., and Nicolet, M.A., Appl. Phys. Lett., 38, (1981), 922 Google Scholar
[14] Tung, R.T., Poate, J.M., Bean, J.C., Gibson, J.M., and Jacobson, D.C., Thin Solid Films, 93, (1983) 77 Google Scholar
[15] Ishiwara, H., Saitoh, S., and Hikosaka, K., Jap. J. Appl. Phy., 20 (1981) 843,Google Scholar
[16] Chen, H., White, G.E., and Stock, S.R., Thin Solid Films, 93, (1982), 161 Google Scholar
[17] Buckley, W.D. and Moss, S.C., Solid-State Electronics, 15, (1972), 1331 Google Scholar
[18] Vaidya, S. and Murarka, S. P., Appl. Phys. Lett., 37 (1980), 51 Google Scholar
[19] Okada, S., Oura, K., Hanawa, T., and Satoh, K., Surf. Sci. 97 (1980), 88 Google Scholar
[20] Tromp, R., van Loenen, E.J., Iwami, M., Smeek, R., and Saris, F.W., Thin Solid Films, 93, (1982) , 151 Google Scholar
[21] Hoffman, D., McGinn, J.T., Thomas III, J.H., and Tams III, F., To be published in J. Amer. Vac. Soc.Google Scholar
[22] Thomas III, J.H., Hoffman, D., McGinn, J.T., and Tams III, F., To be published in J. Amer. Vac. Soc.Google Scholar
[23] Abrahams, M.S., Weisberg, L.R., Buiocchi, C.J. and Blanc, J., J. Mater. Sci., 4, (1969), 223 Google Scholar
[24] Chen, J.R., Houng, M.P., Hsiung, S.K., and Liu, Y.C., Appl . Phys, Lett. 37 (1980), 824 Google Scholar
[25] Tu, K.N., J. Vac. Sci. Technol., 19, (1981), 775 Google Scholar