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The Influence of Predeposition of Nonolayer Thin Titanium Filns Upon the Crystallography of Subsequently Formed Pd2Si Layers on (100) Silicon
Published online by Cambridge University Press: 25 February 2011
Abstract
This paper reports upon a new technique for the formation of epitaxial Pd2Si on (100) silicon using thin predeposited titanium layers. Improvements in the quality of epitaxy in Pd2Si on {111} silicon by this technique will also be shown. A preliminary model for the formation of epitaxy will be given. Discrepancies between this model and results in the literature will be discussed and experiments suggested to resolve the uncertainties.
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- Copyright © Materials Research Society 1987
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