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Influence of Plasma Density and Energy on the Characteristics of Amorphous Silicon Films Prepared by ECR Microwave Plasma CVD

Published online by Cambridge University Press:  25 February 2011

Masahiro Tanaka ,
Kunihiko Watanabe ,
Satoru Todoroki  and
Kazuo Suzuki
Masahiro Tanaka
Affiliation:
Production engineering research laboratory, Hitachi, Ltd., Totsuka-ku, Yokohama 244
Kunihiko Watanabe
Affiliation:
Production engineering research laboratory, Hitachi, Ltd., Totsuka-ku, Yokohama 244
Satoru Todoroki
Affiliation:
Production engineering research laboratory, Hitachi, Ltd., Totsuka-ku, Yokohama 244
Kazuo Suzuki
Affiliation:
Hitachi Works, Hitachi, Ltd., Hitachi-shi, Ibaraki 317
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Abstract

The influence of magnetic field on Plasma parameters of ECR plasma were measured by the Langmuir probe technique. And it was shown that the plasma parameters can be controlled by magnetic field. Amorphous silicon films were prepared by ECR plasma CVD method under various magnetic field conditions for the purpose to investigate the effect of plasma density and energy on the property of amorphous silicon films. High plasma density improved the photoconductivity of amorphous silicon but the optical gap and activation of dopant depended on the substrate temperature rather than plasma density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 139
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Carlson, D.E. and Wronski, C.R., Appl.Phys.Lett., 28, 671 (1976).Google Scholar
2. Snell, A.J., Mackenzie, K.D., Spear, W.E. and LeComber, P.G., Appl.Phys., 24, 375 (1981).Google Scholar
3. Knights, J.C., Proc.10th Conf.Solid State Devices, Tokyo, 1978, Jpn. J. Appl. Phys.,18, Suppl. 18-1, p.101(1979).Google Scholar
4. Watanabe, T., Tanaka, M., Azuma, K., Nakatani, M., Sonobe, T., and Shimada, T., Jpn.J.Appl.Phys., 26, 1215 (1987).CrossRefGoogle Scholar
5. Matsuo, S. and Kikuchi, M., Jpn.J.Appl.Phys., 22, L210 (1983).Google Scholar
6. Kitagawa, M., Ishihara, S., Setsune, K., Manabe, Y. and Hirao, T., Jpn.J.Appl.Phys.,26,L231(1987).Google Scholar
7.H.Amemiya,K.Shimizu, Kato, S. and Sakamoto, Y., Jpn.J.Appl. Phys., 27, L927 (1988).Google Scholar
8. Shirai, K., Iizuka, T., Gonda, S., Jpn.J.Appl.Phys., 28, 897 (1989).Google Scholar
9. Perrin, J., Takeda, Y., Hirano, N., Matsuura, H. and Matsuda, A., Jpn.J. Appl.Phys., 28, 5 (1989).CrossRefGoogle Scholar
10. Chen, F.F., Plasma Diagnostic Techniques(Academic Press New York, 1965),Chap.4.Google Scholar
11. Dote, T., Amemiya, H. and Ichiyama, T., Jpn.J.Appl.Phys.,3,789. (1964)Google Scholar
12. Sakata, I. and Hayashi, Y., Jpn.J.Appl.Phys., 20, 675 (1981).CrossRefGoogle Scholar