Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-24T05:47:55.804Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Oxygen on Er-Related Emission in Gan With a Large Yellow Band

Published online by Cambridge University Press:  10 February 2011

S. Ueklsa ,
T. Goto  and
Mv. Kumagai
S. Ueklsa
Affiliation:
Department of Electrical Engineering, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Kawasald, Kanagawa, 214-8571Japan
T. Goto
Affiliation:
Department of Electrical Engineering, School of Science and Technology, Meiji University, 1-1-1 Higashimita, Kawasald, Kanagawa, 214-8571Japan
Mv. Kumagai
Affiliation:
Kanagawa High-technology Foundation, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213Japan
Get access

Abstract

In order to investigate the luminescence properties of Er3+in GaN and the effect of oxygen (O) on Er3+ -related emission in GaN:Er, erbium (Er) ions were implanted into single-crystal h-GaN grown on a c-axis sapphire substrate at an energy of 2MeV. Oxygen ions were subsequently coiniplanted into GaN with Er ions. The influence of oxygen on Er-related emission in GaN with a large yellow band was studied by comparing photoluminescence (PL) measurements of GaN:Er and GaN:ErO. It was found that the optimum annealing temperature to obtain maximum PL intensity was 1200°C and that the E3+a-related PL intensities from GaN:ErO samples were negligibly enhanced in comparison with the GaN:Er samples. The temperature dependence of PL intensity in GaN:ErO showed no appreciable difference from that of GaN:Er. But good correlation between Er-related and a large yellow band emission was observed in GaN. This indicates that codoped oxygen ions influence Er-related and yellow band emission in GaN

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 163
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Katsumata, H., Uekusa, S., Majima, A. and Kumagai, M., J. Appl. Phys. 77, 1881 (1995)Google Scholar
[2] Katsumata, H., Uekusa, S. and Sai, H., J. Appl. Phys. 80,2383 (1996)Google Scholar
[3] Uekusa, S., Shimazu, K., Majima, A. and Yabuta, K., Nucl. Instr. and Meth. B 106,477 (1995)Google Scholar
[4] Uekusa, S., Oshima, T., Majima, A. and Kumagai, M., Proc. 1994 International Workshop on Elctoluminescene, Beijing 279–283 (1994)Google Scholar
[5] Majima, A., Uekusa, S., Abe, K., and Kumagai, M., J. Lminescence 60 and 61,595 (1994)Google Scholar
[6] Shin, J. H., van den Hoven, G. N. and Polman, A., Appl. Phys. Lett 67,377 (1995)Google Scholar
[7] Michel, J., Benton, J. L., Fermnte, R. E, Jacobson, D. C., Eaglesham, D. J., Fitzgerald, E. A., Xie, Y H., Poate, J. M. and Kimerling, L. C., J. Appl. Phys. 70,2672 (1991)Google Scholar
[8] Takahei, K. and Taguchi, A., J. Appl.Phys. 74, 1979 (1993)Google Scholar
[9] Uekusa, S., Awahar, K., Shinazu, K. and Kumagai, M., ICSCM-N's97 Proc. (to be published)Google Scholar
[10] Favennec, P. N., L'Haridon, H., Salvi, M., Moutonnet, D. and Guillou, Y Le., Electron Lett Vol. 25, 718 (1989)Google Scholar