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Influence of Oxygen Content on the Electronic Properties of the PrAlO3/SrTiO3 Interface

Published online by Cambridge University Press:  10 July 2015

Shirin Mozaffari
Affiliation:
Physics Department, The University of Texas at Austin, 2515 Speedway, C1600, Austin, TX 78712, U.S.A.
Mark C. Monti
Affiliation:
Physics Department, The University of Texas at Austin, 2515 Speedway, C1600, Austin, TX 78712, U.S.A.
Samaresh Guchhait
Affiliation:
Micoelectronic Research Lab, The University of Texas at Austin, 10100 Burnet Rd, Austin, TX 78758, U.S.A.
Jeremy W. Paster
Affiliation:
Physics Department, The University of Texas at Austin, 2515 Speedway, C1600, Austin, TX 78712, U.S.A.
Daniel M. Tennant
Affiliation:
Physics Department, The University of Texas at Austin, 2515 Speedway, C1600, Austin, TX 78712, U.S.A.
John T. Markert
Affiliation:
Physics Department, The University of Texas at Austin, 2515 Speedway, C1600, Austin, TX 78712, U.S.A.
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Abstract

We have investigated the effect of oxygen pressure during growth (PO2) on the electronic and magnetic properties of PrAlO3 films grown on TiO2-terminated SrTiO3 substrates. The films are smooth, with flat terraces. Resistivity measurements show an increase in the sheet resistance as PO2 is increased from 10–3 to 10–4 torr, with an usual peak as a function of temperature for the sample grown in higher oxygen pressure. We measured a moderate positive magnetoresistance (MR) at low magnetic fields that evolves into a larger negative MR at high fields, for both PO2 samples. Hall effect data exhibit a complex temperature dependence that suggests a compensated carrier density. We observe behavior consistent with two different types of carriers at each of the two different interfaces.

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Articles
Copyright
Copyright © Materials Research Society 2015 

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References

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