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Influence of Oxygen Annealing on Electrical Properties of ZnO:Cl Thin Films
Published online by Cambridge University Press: 01 February 2011
Abstract
The influence of oxygen treatment on carrier transport properties of pure ZnO and ZnO:Cl thin films grown by MOCVD were studied. The experimentally obtained values of carrier concentrations after oxyden treatment at different temperatures, were compared with the the results obtained from thermodynemical analysis of the system: ZnO:Cl-Oxyen vapour pressure, using method of quasi-chemical reactions (QCR).
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- Copyright © Materials Research Society 2007