Article contents
Influence of Mis-Orientation of C-plane Sapphire Substrate on the Early Stages of MOCVD Growth of GaN Thin Films
Published online by Cambridge University Press: 01 February 2011
Abstract
We have studied the early stages of GaN growth to realize the growth mechanism of GaN thin films on mis-oriented sapphire substrates which affects the surface and crystal quality of GaN thin films. As the result, it was found that the larger mis-orientation angle helps the growth of the larger grain of GaN and leads to the earlier shift of growth mode from 3D to 2D. The AFM observation of closed-coalesced GaN thin films revealed the difference in the micro-step structures by the mis-orientation angle of sapphire substrate. The result of x-ray rocking curve as a function of mis-orientation angle well matched with the microstructure of GaN surface, indicating that the larger mis-orientation angle helps the column ordering of GaN crystals.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 2005
References
REFERENCES
- 1
- Cited by