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The Influence of Mechanical Stress on Hot-Carrier Degradation in Mosfet's

Published online by Cambridge University Press:  21 February 2011

Ingrid De Wolf ,
Rudi Bellens ,
Guido Groeseneken  and
Herman E. Maes
Ingrid De Wolf
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Rudi Bellens
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Guido Groeseneken
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Herman E. Maes
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

Non-uniform hot-carrier degradation in n-channel polycide-gate MOSFET's with different thicknesses of the poly-Si film, and in p-channel polycide-gate MOSFET's with TiSi2- or CoSi2-gate-silicide, is studied. The n-MOSFET's with the thinnest poly-Si film, show an increased interface trap generation, while the influence of the gate-silicide material on the degradation behaviour of the p-MOSFET's is found to be very small. The results are evaluated in terms of the effect of mechanical stress on the degradation characteristics: favourable for compressive mechanical stress and unfavourable for tensile stress. A correlation with stress measurements by micro-Raman spectroscopy is made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 281
Copyright
Copyright © Materials Research Society 1993

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