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Influence of growth temperature on emission efficiency of InGaN/GaN multiple quantum wells

Published online by Cambridge University Press:  21 March 2011

Fei Chen ,
A. N. Cartwright ,
Paul M. Sweeney ,
M. C. Cheung ,
Jeffrey S. Flynn  and
David Keogh
Fei Chen
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260
A. N. Cartwright
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260
Paul M. Sweeney
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260
M. C. Cheung
Affiliation:
Department of Electrical Engineering, University at Buffalo, Buffalo, NY 14260
Jeffrey S. Flynn
Affiliation:
ATMI Inc, 7 Commerce Drive, Danbury, CT 06810-4169
David Keogh
Affiliation:
ATMI Inc, 7 Commerce Drive, Danbury, CT 06810-4169
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Abstract

A comparative study, using time-resolved and CW photoluminescence spectroscopy, of MOVPE grown InGaN/GaN multiple quantum wells deposited on HVPE GaN/Sapphire at different growth temperatures was undertaken. It was found that the PL linewidth increased and the peak emission energy decreased as the growth temperature was reduced. Moreover, the sample grown at an intermediate growth temperature exhibited total integrated luminescence intensity much greater than the samples grown at higher or lower growth temperatures. A phenomenological carrier recombination dynamics model based on the competition of quantum well-like radative recombination, spatially localized radiative recombination in potential minima and non-radiative recombination through defects is presented to provide an explanation of the observed emission dynamics and efficiency. In this model, the emission efficiency is determined by the relative area of defects and the number density of localized states in the potential minima, both of which are influenced by the growth temperature. Furthermore, the photon energy dependent lifetimes are well fitted with this model by assuming a Gaussian shape localized states distribution. The localized potential minima are consistent with nanoscale indium rich regions due to indium aggregation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I6.27.1
Copyright
Copyright © Materials Research Society 2002

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