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The Influence of Dose Rate on the Formation of CrSi2 by Ion Mixing
Published online by Cambridge University Press: 25 February 2011
Abstract
The relationship between growth rate of CrSi2 and dose rate during Xe ion irradiation at 500K is investigated. Dose raies difffering by up to a factor of 40 have been utilized to study the relationship. For a fixed total dose, a lower dose rate results in a thicker silicide layer compound to a higher dose rate. The results are explained from radiation-enhanced diffusion theory.
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- Copyright © Materials Research Society 1987