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Influence of Domain Structure on Magnetoresistance in Perovskite Manganite Grain Boundary Junctions

Published online by Cambridge University Press:  21 March 2011

Robert Gunnarsson ,
Anatoli Kadigrobov  and
Zdravko Ivanov
Robert Gunnarsson
Affiliation:
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE-412 96 Göteborg, Sweden
Anatoli Kadigrobov
Affiliation:
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE-412 96 Göteborg, Sweden B. I. Verkin Institute for Low Temperature Physics & Engineering, Kharkov, Ukraine
Zdravko Ivanov
Affiliation:
Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, SE-412 96 Göteborg, Sweden
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Abstract

We have been able to deduce a temperature dependence of the built-in potential in La2/3Sr1/3MnO3 grain boundary junctions. This has been performed by trimming a single grain boundary down to 1μm width with a focused ion-beam. We can thereby see the impact of single domain walls on the magnetoresistance and the current-voltage characteristics. We have also demonstrated the effect of averaging as we increased the number of junctions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 674: Symposia T/U/V – Applications of Ferromagnetic and Optical Materials, Storage and Magnetoelectronics , 2001 , U3.7
Copyright
Copyright © Materials Research Society 2001

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References

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