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Influence of Antimony Doping on Nanoscale Arsenic Clusters and Dislocation Loops in Low-Temperature Grown Gallium Arsenide Films

Published online by Cambridge University Press:  21 March 2011

V.V. Chaldyshev ,
N.A. Bert ,
A.E. Romanov ,
A.A. Suvorova ,
A.L. Kolesnikova ,
V.V. Preobrazhenskii ,
M.A. Putyato ,
B.R. Semyagin  and
P. Werner
V.V. Chaldyshev
Affiliation:
The Ioffe Physico-Technical Institute, St. Petersburg, 194021, Russia
N.A. Bert
Affiliation:
The Ioffe Physico-Technical Institute, St. Petersburg, 194021, Russia
A.E. Romanov
Affiliation:
The Ioffe Physico-Technical Institute, St. Petersburg, 194021, Russia
A.A. Suvorova
Affiliation:
The Ioffe Physico-Technical Institute, St. Petersburg, 194021, Russia
A.L. Kolesnikova
Affiliation:
Institute for Problems of Mechanical Engineering, St.Petersburg, 194021, Russia
V.V. Preobrazhenskii
Affiliation:
Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
M.A. Putyato
Affiliation:
Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
B.R. Semyagin
Affiliation:
Institute of Semiconductor Physics, Novosibirsk, 630090, Russia
P. Werner
Affiliation:
Max-Plank Institut fur Mikrostrukturphysik, Halle/Saale, D-06120, Germany
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Abstract

Transmission electron microscopy was employed to study the microstructure of GaAs films grown by molecular-beam epitaxy at low temperature and delta-doped with Sb. Thus obtained material contained 0.5 at.% of excess arsenic that precipitates upon post-growth anneals. The Sb doping was found to strongly affect the microstructure of arsenic clusters and their ripening rate upon annealing. Segregation of Sb impurities in the As clusters was revealed. In contrast to the well known pure As clusters, the As-Sb clusters induced strong local deformations in the surrounding GaAs matrix. Relaxation of these deformations resulted in formation of dislocation loops, which was studied both experimentally and theoretically.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 652: Symposium Y – Influences of Interface & Dislocation Behavior on Microstructure Evolution , 2000 , Y8.7
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Smith, F.W., Calawa, A.R., Chen, C.L., Mantra, M.J., and Mahoney, L.J., IEEE Electron. Dev. Lett. 9, 77 (1988)Google Scholar
2. Kaminska, M., Z.Liliental-Weber, Weber, E.R., George, T., Kortright, J.B., Smith, F.W., Tsaur, B.Y. and Calawa, A.R., Appl. Phys. Lett. 54, 1831 (1989)Google Scholar
3. Melloch, M.R., Mahalingam, K., Otsuka, N., Woodall, J.M., and Warren, A.C., J.Cryst.Growth 111, 39 (1991)Google Scholar
4. Bert, N.A., Veinger, A.I., Vilisova, M.D., Goloshchapov, S.I., Ivonin, I.V., Kozyrev, S.V., Kunitsyn, A.E., Lavrentieva, L.G., Lubyshev, D.I., Preobrazhenskii, V.V., Semyagin, B.R., Tretyakov, V.V., Chaldyshev, V.V., and Yakubenya, M.P., Phys. Solid State 35, 1289 (1993)Google Scholar
5. Bert, N.A., Chaldyshev, V.V., Suvorova, A.A., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., and Werner, P., Appl. Phys. Lett. 74, 1588 (1999)Google Scholar
6. Nakahara, S., Chu, S.N.G., and Stall, R.A., Philos. Mag. A53, 403 (1986)Google Scholar
7. Hirsch, P.B., Howie, A., Nicholson, R.B., Pashley, D.W., and Whelan, M.J., Electron Microscopy of Thin Crystals (Butterworths, London, 1965)Google Scholar
8. Mura, T., Micromechanics of Defects in Solids, (Martinus Nijhoff, 1982)Google Scholar
9. Dundurs, J. and Salamon, N.J., Phys. Stat. Sol. (b), 50, 125 (1972)Google Scholar
10. Bert, N.A., Chaldyshev, V.V., Lubyshev, D.I., Preobrazhenskii, V.V., and Semyagin, B.R., Semiconductors 29, 1170 (1995)Google Scholar