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Incoherent Light Recrystallization of Silicon-On-Insulator Films

Published online by Cambridge University Press:  21 February 2011

Mc D. Robinson
Affiliation:
Epsilon Technology, Inc., Tempe, AZ 85282
G. K. Celler
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
D. J. Lischner
Affiliation:
AT&T Bell Laboratories, Allentown, PA 18103
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Abstract

Energy sources used to convert polycrystalline silicon-on-insulator films to single crystal through melting and recrystallization have included electron beams, lasers, graphite strip heaters, and incoherent light from tungsten halogen and vapor arc lamps. This review focuses on incoherent light recrystallization of polycrystalline silicon; comparing tungsten filament and vapor arc lamp sources, and linear zone melting vs. uniform illumination. The discussion includes material redistribution, defect formation, and the dynamics of melting.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Golecki, I., This Volume.Google Scholar
2. Bean, K. E. and Runyan, W. R., J. Electrochem. Soc. 124, 5C (1977).Google Scholar
3. Appleton, B. R. and Celler, G. K., Eds., Laser and Electron Beam Interactions with Solids (North-Holland, New York, 1982).Google Scholar
4. Narayan, J., Brown, W. L. and Lemons, R. A., Eds., Laser-Solid Interactions and Transient Thermal Processing of Materials (North Holland, New York, 1983).Google Scholar
5. Jastrzebski, L., J. Crystal Growth 63, 493 (1983).Google Scholar
6. Lam, H. W. and Pinizzotto, R. F., J. Crystal Growth 63, 554 (1983).Google Scholar
7. Haond, M., Physique, J., Coll. C5, C5327 (1983).Google Scholar
8. Robinson, Mc D., Lischner, D. J. and Celler, G. K., J. Crystal Growth 63, 484 (1983).10.1016/0022-0248(83)90163-XGoogle Scholar
9. Stultz, T. J., This Volume.Google Scholar
10. Stultz, T. J. and Gibbons, J. F., Appl. Phys. Lett. 41, 824 (1982).Google Scholar
11. Stultz, T. J., Sturm, J. and Gibbons, J. F., p. 463 in ref.[3]Google Scholar
12. Kamgar, A. and Labate, E., Mat. Lett. 1, 91 (1982).Google Scholar
13. Kamgar, A., Rozgonyi, G. A. and Knoell, R., p. 569 in ref. [3].Google Scholar
14. Vu, D. P., Haond, M. and Benshael, D.,J. Appl. Phys. 54, 437 (1983).10.1063/1.331677CrossRefGoogle Scholar
15. Lischner, D. J. and Celler, G. K., p. 759 in ref. [2].Google Scholar
16. Celler, G. K., Robinson, Mc D. and Lischner, D. J., Appl. Phys. Lett. 42, 99 (1983).CrossRefGoogle Scholar
17. Celler, G. K., Robinson, Mc D., Lischner, D. J. and Sheng, T. T., p. 575 in ref. [3].Google Scholar
18. Pinizzotto, R. F., J. Crystal Growth 63, 559 (1983).Google Scholar
19. Celler, G. K., Trimble, L. E., Robinson, Mc D., Ng, K. K. and Leamy, H. J., Electronic Materials Conf., Fort Collins, CO, 1982.Google Scholar
20. Schimmel, D. G., J. Electrochem. Soc., 126, 479 (1979).10.1149/1.2129066Google Scholar
21. Robinson, Mc D., Celler, G. K. and Lischner, D. J., Abstract No. 95, The Electrochemical Society, Extended Abstracts 83–1, 147 (May 1983).Google Scholar
22. Celler, G. K. and Trimble, L. E., Proceedings of Materials Research Society 1983 Fall Meeting, in press.Google Scholar
23. Celler, G. K., Robinson, Mc D., Trimble, L. E. and Lischner, D. J., Appl. Phys. Lett. 43, 868 (1983).Google Scholar
24. Celler, G. K., Jackson, K. A., Trimble, L. E., Robinson, Mc D. and Lischner, D. J., Proceedings of Materials Research Society 1983 Fall Meeting, in press.Google Scholar
25. Hawkins, W. G. and Biegelsen, D. K., Appl. Phys. Lett. 42, 358 (1983).Google Scholar