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In Situ Ion Implantation for Quantitative SIMS Analysis
Published online by Cambridge University Press: 22 February 2011
Abstract
The primary ion column of a secondary ion mass spectrometer (Cameca IMS 3f) has been used as an ion implanter to prepare calibrated standards, In situ for quantitative SIMS analysis, with an accuracy better than 10%. The technique has been used to determine oxygen concentrations in contaminated TiSi2 films by implanting a reference level of 18O into a portion of the film.
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- Copyright © Materials Research Society 1985
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