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Improvement of the ITO-p Interface In a-SI:H Solar Cells Using a Thin SiO Intermediate Layer

Published online by Cambridge University Press:  10 February 2011

C. Nunes De Carvalho ,
J. M. M. De Nijs ,
I. Ferreira ,
E. Fortunato  and
R. Martins
C. Nunes De Carvalho
Affiliation:
Departamento de Ciências dos Materiais, FCT-UNL and CEMOP-UNINOVA, Quinta da Torre, 2825 Monte da Caparica, Portugal Centro de Física Molecular, UTL,IST, Av. Rovisco Pais, 1000 Lisboa, Portugal
J. M. M. De Nijs
Affiliation:
DIMES, Delft University of Technology, Netherlands
I. Ferreira
Affiliation:
Departamento de Ciências dos Materiais, FCT-UNL and CEMOP-UNINOVA, Quinta da Torre, 2825 Monte da Caparica, Portugal Centro de Física Molecular, UTL,IST, Av. Rovisco Pais, 1000 Lisboa, Portugal
E. Fortunato
Affiliation:
Departamento de Ciências dos Materiais, FCT-UNL and CEMOP-UNINOVA, Quinta da Torre, 2825 Monte da Caparica, Portugal Centro de Física Molecular, UTL,IST, Av. Rovisco Pais, 1000 Lisboa, Portugal
R. Martins
Affiliation:
Departamento de Ciências dos Materiais, FCT-UNL and CEMOP-UNINOVA, Quinta da Torre, 2825 Monte da Caparica, Portugal Centro de Física Molecular, UTL,IST, Av. Rovisco Pais, 1000 Lisboa, Portugal
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Abstract

The use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the fTO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The TO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 25
Copyright
Copyright © Materials Research Society 1996

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