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Improvement of LDI BUMP Stripping Process by Development of Room Temperature PR Stripper

Published online by Cambridge University Press:  01 February 2011

Young-Min Kang ,
Dong Chan Bae ,
Hyun-Joon Kim ,
Young- Nam Kim ,
Young Ho Kim  and
Tae Sung Kim
Young-Min Kang
Affiliation:
dm.kang@samsung.com, Samsung Electronics, Manufacturing Technology Team1, San#24 Nongseo-Dong,Giheung-Gu, Yongin-City, 446-711, Korea, Republic of, 82-31-209-0984
Dong Chan Bae
Affiliation:
dc1114.bae@samsung.com, Samsung Electronics, BUMP Group, San#24 Nongseo-Dong,Giheung-Gu, Young-City, 446-711, Korea, Republic of
Hyun-Joon Kim
Affiliation:
hyunjoon.kim@samsung.com, Samsung Electronics, Manufacturing Technology Team1, San#24 Nongseo-Dong,Giheung-Gu, Young-City, 446-711, Korea, Republic of
Young- Nam Kim
Affiliation:
kimyn@samsung.com, Samsung Electronics, Manufacturing Technology Team1, San#24 Nongseo-Dong,Giheung-Gu, Young-City, 446-711, Korea, Republic of
Young Ho Kim
Affiliation:
sanho502@samsung.com, Samsung Electronics, Manufacturing Technology Team1, San#24 Nongseo-Dong,Giheung-Gu, Young-City, 446-711, Korea, Republic of
Tae Sung Kim
Affiliation:
taesung.kim@samsung.com, Samsung Electronics, Manufacturing Technology Team1, San#24 Nongseo-Dong,Giheung-Gu, Young-City, 446-711, Korea, Republic of
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Abstract

Bump process using gold bump led to many cleaning problems like polymer residues, metal and polyimide consumption after stripping process. First of all, stripping process of bump photoresist is one of the difficult technologies since thickness of PR pattern of bump is thicker than that of general metal line at least 100 times. We investigated the improvement of LDI BUMP stripping Process at 25 with new chemical. We found that the wettability may be improved when the additive was added to the chemical and it improves the stripping ability. It was found that new chemical was superior to commercial chemical in terms of chemical stability, removal efficiency of polymer residue and decrease in metal and polyimide consumption. Also, we could obtain removal mechanism of photoresist pattern by measured Raman equipment and enhancement of yield in mass production line of semiconductor.

Keywords

chemical compositionmetalsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B07-16
Copyright
Copyright © Materials Research Society 2007

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References

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