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Improvement of a-Si:H P-I-N Devices using Zinc Oxide based Back-Reflectors

Published online by Cambridge University Press:  21 February 2011

C. Kothandaraman ,
T. Tonon ,
C. Huang  and
A. E. Delahoy
C. Kothandaraman
Affiliation:
Advanced Photovoltaic Systems, P.O. Box 7093, Princeton, NJ 08543.
T. Tonon
Affiliation:
Advanced Photovoltaic Systems, P.O. Box 7093, Princeton, NJ 08543.
C. Huang
Affiliation:
Advanced Photovoltaic Systems, P.O. Box 7093, Princeton, NJ 08543.
A. E. Delahoy
Affiliation:
Advanced Photovoltaic Systems, P.O. Box 7093, Princeton, NJ 08543.
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Abstract

The conversion efficiency of a-Si:H P-I-N photovoltaic devices was improved using aluminum doped zinc oxide thin films between the n-layer and the metal electrode. The improvement is due to the increase in the quantum efficiency, mainly in the wavelengths between 550 – 750 nm, and is attributed to the increased reflectivity of the zinc oxide/metal layer over the conventional metal electrode. The dependence of the enhancement, on the thickness of the zinc oxide layer and the back metal electrode was studied and the optimal configuration was identified as 800 angstroms of zinc oxide backed by a silver electrode. Photostability studies of devices containing these back-reflectors showed that their stability to light-soaking was comparable to conventional devices establishing the use of zinc oxide back-reflectors as a viable way of increasing the efficiency of a-Si:H devices without compromising their stability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 475
Copyright
Copyright © Materials Research Society 1991

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References

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