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Improved Soi Films By High Dose Oxygen Implantation and Lamp Annealing

Published online by Cambridge University Press:  28 February 2011

G. K. Celler ,
P. L. F. Hemment ,
K. W. West  and
J. M. Gibson
G. K. Celler
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
P. L. F. Hemment
Affiliation:
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, England
K. W. West
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. M. Gibson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Ion beam synthesis of a buried SiO2 layer is an attractive silicon-on-insulator technology for high speed CMOS circuits and radiation hardened devices. We demonstrate here a new annealing procedure at 1405°C that produces silicon films of excellent quality, essentially free of oxygen precipitates and with sharp interfaces between the Si and the SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 227
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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