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Improved CdZnTe detectors grown by vertical Bridgman Process

Published online by Cambridge University Press:  10 February 2011

K. G. Lynn ,
M. Weber ,
H. L. Glass ,
J. P. Flint  and
Cs. Szeles
K. G. Lynn
Affiliation:
Dept. of Physics, Washington State University Pullman, WA 99164-2814
M. Weber
Affiliation:
Dept. of Physics, Washington State University Pullman, WA 99164-2814
H. L. Glass
Affiliation:
Johnson Matthey Electronics, Spokane, WA 99216
J. P. Flint
Affiliation:
Johnson Matthey Electronics, Spokane, WA 99216
Cs. Szeles
Affiliation:
eV Products division of II-VI, Inc., Saxonburg, PA 16056
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Abstract

The γ ray (57Co) and α particle (241Am) detector response of Cdl-xZnxTe crystals grown by vertical Bridgman technique was studied under both positive and negative bias conditions. Postgrowth processing was utilized to produce a high-resistivity material with improved chargecollection properties. Samples of various Zn concentrations were investigated by I-V measurements and thermally stimulated spectroscopies to determine the ionization energies of deep levels in the band gap. When the post-processing conditions were optimized the lowenergy tailing of the γ-ray photopeaks was significantly reduced and an energy resolution of under 5% was achieved for the 122 keV γ-photon line in crystals with x=0.2 Zn content at room temperature. A peak to background ratio of 14:1 for the 122 keV photopeak from 57Co was observed on the best sample, using a standard planar detection geometry. The low-energy 14.4 keV X-ray line could also be observed and distinguished from the noise.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 229
Copyright
Copyright © Materials Research Society 1998

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References

[1] CdTe and Related Cd Rich Alloys, edited by Triboulet, R., Wilcox, W.R., and Oda, O. (North-Holland, Amsterdam, 1993).Google Scholar
[2] Semiconductors for Room Temperature Nuclear Detector Applications, edited by Schlesinger, T.E. and James, R.B. (Academic Press, San Diego, 1995).Google Scholar
[3] Raiskin, E. and Butler, J.F., IEEE Trans. Nucl. Sci. NS–35, 81–84 (1988).Google Scholar
[4] Doty, F.P., Butler, J.F., Schetzina, J.F., and Bowers, K.A., J. Vac. Sci. Technol. B10, 1418–1422 (1992).Google Scholar
[5] Luke, P.N., Appl. Phys. Lett. 65, 2884–2886 (1994).Google Scholar
[6] Eisen, Y. and Horowitz, Y., Nucl. Instr. Meth. A353, 60–66 (1994).Google Scholar
[7] Santic, B. and Desnica, U.V., Appl. Phys. Lett., 56, 2636–2638 (1990).Google Scholar
[8] Huang, Z.C., Xie, K., and Wie, C.R., Rev. Sci. Instrum. 62, 1951–1954 (1991).Google Scholar
[9] Bube, R.H., Photoconductivity of Solids, (Wiley, New York, 1960), p. 292.Google Scholar
[10] Glass, H.L., Socha, A.J., Bakken, D.W., Speziale, V.M., and Flint, J.P., Fall 1997 MRS meeting, elsewhere in these proceedings (1997) to be published.Google Scholar
[11] Rudolph, P., Rinas, U., and Jacobs, K., J. Crystal Growth, 138, 249–254 (1994).Google Scholar
[12] Rudolph, P., Kawasaki, S., Yamashita, S., Yamamoto, S., Usuki, Y., Konagaya, Y., Matada, S., and Fukuda, T., J. Crystal Growth, 161, 28–33 (1996).Google Scholar
[13] Lavietes, A.D., McQuaid, J.H., Ruhter, W.D., Paulus, T.J., LLNL Preprint (1994).Google Scholar
[14] Knoll, G.F., and McGregor, D.S., Mat. Res. Symp. Proc. 302, 17 (1993).Google Scholar
[15] Szeles, Cs., Shan, Y.Y., Lynn, K.G., and Moodenbaugh, A.R., Phys. Rev. B 55, 6945–6949 (1997).Google Scholar