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Impact of the Al Mole Fraction in the Bulk- and Surface-State Induced Instability of AlGaN/GaN HEMTs

Published online by Cambridge University Press:  17 May 2012

S. DasGupta ,
M. Sun ,
A. Armstrong ,
R. Kaplar ,
M. Marinella ,
J. Stanley ,
M. Smith ,
S. Atcitty  and
T. Palacios
S. DasGupta
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185 USA
M. Sun
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 USA.
A. Armstrong
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185 USA
R. Kaplar
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185 USA
M. Marinella
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185 USA
J. Stanley
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185 USA
M. Smith
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185 USA
S. Atcitty
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185 USA
T. Palacios
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 USA.
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Abstract

Charge trapping and slow (10 s to > 1000 s) detrapping in AlGaN/GaN HEMTs designed for high breakdown voltage (> 1500 V) are studied to identify the impact of Al molefraction and passivation on trapping. Two different trapping components, TG1 (Ea = 0.62 eV) and TG2 (with negligible temperature dependence) in AlGaN dominate under gate bias stress in the off-state. Al0.15Ga0.85N shows much more vulnerability to trapping under gate stress in the absence of passivation than does AlGaN with a higher Al mole fraction. Under large drain bias, trapping is dominated by a much deeper trap TD. Detrapping under illumination by monochromatic light shows TD to have Ea ≈ 1.65 eV in Al0.26Ga0.74N and Ea ≈ 1.85 eV in Al0.15Ga0.85N. This is consistent with a transition from a deep state (Ec - 2.0 eV) in the AlGaN barrier to the 2DEG.

Keywords

semiconductingIII-Vdefects
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g09-02
Copyright
Copyright © Materials Research Society 2012

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References

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