Hostname: page-component-788cddb947-m6qld Total loading time: 0 Render date: 2024-10-15T04:51:01.800Z Has data issue: false hasContentIssue false
  • English
  • Français

The Impact of Temperature and Concentration on SC2 Cost and Performance in a production Environment

Published online by Cambridge University Press:  10 February 2011

D. J. Riley ,
J. S. Glick ,
V. Parks  and
G. Matamis
D. J. Riley
Affiliation:
Advanced Micro DeEnvironmentvices, 5204 E. Ben White Blvd., Austin, TX 78741
J. S. Glick
Affiliation:
Advanced Micro Devices, 915 DeGuigne Dr, Sunnyvale, CA 94088
V. Parks
Affiliation:
Advanced Micro DeEnvironmentvices, 5204 E. Ben White Blvd., Austin, TX 78741
G. Matamis
Affiliation:
Advanced Micro DeEnvironmentvices, 5204 E. Ben White Blvd., Austin, TX 78741
Get access

Abstract

Recent studies have shown that extremely dilute HCl mixtures can offer considerable cost savings and improved particle performance relative to traditional SC2 formulations. This work indicates, however, that extreme levels of dilution are not necessary to secure many of the benefits suggested for dilute HCI. Significant benefit can be attained by pursuing moderate concentration and temperature alterations. In this study, an intermediate dilution and temperature reduction are evaluated to assess potential production advantage. Comparison of a 1:1:20 formulation at 60 C is made to a more traditional 1:1:6 mixture at 85 C. The impact of the chemistry and temperature alteration on peroxide decomposition rate is shown to be dramatic. While initial pour-up ratios suggest that the dilute recipe could require 1/3 as much peroxide as the traditional chemistry, chemical savings are significantly more dramatic due to the ability of the solution to maintain concentration over time. An additional benefit associated with the alternative pour-up is a marked reduction in particle levels on silicon surfaces; particle levels on thermal oxide wafers have not shown the same trend. VPD-ICPMS measurements are used in this study to illustrate that the recipe change results in comparable metallic removal efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 519
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kern, W.A. and Poutinen, D.A., RCA Rev., p. 187 (1970).Google Scholar
2. Hurd, T.Q., SEMI 1995 - Cleaning Technology for the Submicron Era, p. 69, (1995).Google Scholar
3. Hurd, T.Q., Mertens, P.W., Schmidt, H.F., Ditter, D., Hall, L.H., Meuris, M., Heyns, M.M., in 1994 Proceedings of the Institute of Environmental Sciences (IES, Mount Prospect, Illinois, 1994), p. 218.Google Scholar
4. Hurd, T.Q., Mertens, P.W., Hall, L.H., Heyns, M.M., in UCPSS 1994 Proceedings (Acco, Leuven, 1994), p. 143.Google Scholar
5. O‘Brien, S., Hurd, T.Q., Tipton, C., in 1995 Proceedings of the Institute of Environmental Sciences (IES, Mount Prospect, Illinois, 1995), p. 435.Google Scholar
6. Christenson, K.K., Smith, S. M., Werho, D., Microcontamination 12(6), p. 47 (1994).Google Scholar
7. Anttila, O.J., Tilli, M.V., J. Electrochem. Soc. 139(6), p. 1751, (1992).CrossRefGoogle Scholar
8. Glick, J.S., 1993 Semiconductor Pure Water and Chemicals Conference Chemical Proceedings, edited by M.K., Balazs (Balazs Analytical Laboratory, Sunnyvale CA, 1993), p. 93 Google Scholar
9. Norga, G.J., Kimerling, L.C., Journal of Electronic Materials 24(4), p. 397, (1995).CrossRefGoogle Scholar
10. Verhaverbeke, S., Messoussi, R., Morinaga, H., Ohmi, T., Ultraclean Semiconductor Processing Technology and Surface Chemical Cleaning and Passivation, edited by M., Liehr, M., Heyns, M., Hirose, H., Parks (Mater. Res. Soc. Proc. 386, Pittsburgh, PA, 1995), p. 3.Google Scholar
11. Dhanda, S., Gupta, P., Chiarello, R., Helms, C.R., to be published.Google Scholar
12. Riley, D.J., Carbonell, R.G., JCIS 158, p. 259, [1993].Google Scholar