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Impact of Dopants on the PbTe Thermoelectric Efficiency

Published online by Cambridge University Press:  01 February 2011

Ka Xiong ,
Rahul P Gupta ,
John B White ,
Bruce Gnade  and
Kyeongjae Cho
Ka Xiong
Affiliation:
kaxiong0124@yahoo.com, University of Texas at Dallas, Materials Science and Engineering, RL10, 800 West Campbell Road, Richardson, Texas, 75080, United States
Rahul P Gupta
Affiliation:
rpg032000@utdallas.edurahul.utd@gmail.com, University of Texas at Dallas, Materials Science and Engineering, Richardson, Texas, United States
John B White
Affiliation:
JWHITE@marlow.com, marlow industries, Dallas, Texas, United States
Bruce Gnade
Affiliation:
gnade@utdallas.edu, University of Texas at Dallas, Materials Science and Engineering, Richardson, Texas, United States
Kyeongjae Cho
Affiliation:
kjcho@utdallas.edu, University of Texas at Dallas, Materials Science, 800 W. Campbell Rd., RL10, Richardson, Texas, 75080, United States, 972-883-2845
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Abstract

We investigated the impact of doping group III elements (Al, Ga, In and Tl) on the electronic structure of PbTe by first principles calculations. The impurity-induced defect level changes with respect to the charge state of the impurity. We find that among the four elements, Tl is the best candidate for the enhancement of thermoelectric efficiency, consistent with the experimental data.

Keywords

thermoelectricelectronic structuredopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1267: Symposium DD – Thermoelectric Materials 2010-Growth, Properties, Novel Characterization Methods and Applications , 2010 , 1267-DD05-19
Copyright
Copyright © Materials Research Society 2010

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