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Image Sensors Based on Thin-film on CMOS Technology: Additional Leakage Currents due to Vertical Integration of the a-Si:H Diodes

Published online by Cambridge University Press:  01 February 2011

Clement Miazza ,
N. Wyrsch ,
G. Choong ,
S. Dunand ,
C. Ballif ,
A. Shah ,
Nicolas Blanc ,
R. Kaufmann ,
F. Lustenberger  and
D. Moraes
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Clement Miazza
Affiliation:
clement.miazza@unine.ch, University of Neuchatel, Institute of microtechnology, Rue Breguet 2, Neuchatel, N/A, 2000, Switzerland, +41327183246, +41327183201
N. Wyrsch
Affiliation:
nicolas.wyrsch@unine.ch, University of Neuchatel, Institute of Microtechnology, Neuchatel, N/A, 2000, Switzerland
G. Choong
Affiliation:
gregory.choong@unine.ch, University of Neuchatel, Institute of Microtechnology, Neuchatel, N/A, 2000, Switzerland
S. Dunand
Affiliation:
sylvain.dunand@unine.ch, University of Neuchatel, Institute of Microtechnology, Neuchatel, N/A, 2000, Switzerland
C. Ballif
Affiliation:
christophe.ballif@unine.ch, University of Neuchatel, Institute of Microtechnology, Neuchatel, N/A, 2000, Switzerland
A. Shah
Affiliation:
arvind.shah@unine.ch, University of Neuchatel, Institute of Microtechnology, Neuchatel, N/A, 2000, Switzerland
Nicolas Blanc
Affiliation:
nicolas.blanc@csem.ch, CSEM SA, Zurich, N/A, 8048, Switzerland
R. Kaufmann
Affiliation:
rolf.kaufmann@csem.ch, CSEM SA, Zurich, N/A, 8048, Switzerland
F. Lustenberger
Affiliation:
felix.lustenberger@csem.ch, CSEM SA, Zurich, N/A, 8048, Switzerland
D. Moraes
Affiliation:
danielle.moraes@cern.ch, CERN, Geneva, N/A, 1211, Switzerland
M. Despeisse
Affiliation:
mathieu.despeisse@cern.ch, CERN, Geneva, N/A, 1211, Switzerland
P. Jarron
Affiliation:
pierre.jarron@cern.ch, CERN, Geneva, N/A, 1211, Switzerland
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Abstract

Image sensors based on thin-film on CMOS technology (TFC) have been developed. In this approach, amorphous silicon (a-Si:H) detectors are vertically integrated on top of a CMOS readout chip so as to form monolithic image sensors. In order to reduce as far as possible the dark current density (Jdark) of the TFC sensors, we have focused on analyzing and understanding the behavior of Jdark in this type of detectors. Edge effects along the periphery and at the corners of the pixel, due to the non planar configuration of the vertically integrated photodiodes, are found to be responsible for an increase of the dark current. A new and adapted solution for the minimization of Jdark is proposed, which combines the use of a metal-i-p a-Si:H diode configuration with a deposition on top of an unpassivated CMOS chip. Values of Jdark as low as 12 pA/cm2 at a reverse polarization of V = -1 V are measured on such TFC sensors.

Keywords

electrical propertiesplasma-enhanced CVD (PECVD) (deposition)sensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 910: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology – 2006 , 2006 , 0910-A17-03
Copyright
Copyright © Materials Research Society 2006

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