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Identification of the Microscopic Structure of New Hot Carrier Damage Centers in Short Channel Mosfets
Published online by Cambridge University Press: 10 February 2011
Abstract
We show, for the first time, that E'like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.
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- Research Article
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- Copyright © Materials Research Society 1997
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