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Identification of the 0.15 eV Donor Defect in Bulk GaAs

Published online by Cambridge University Press:  22 February 2011

Z-Q. Fang ,
J. W. Hemsky  and
D. C. Look
Z-Q. Fang
Affiliation:
Physics Department, Wright State University, Dayton OH 45435
J. W. Hemsky
Affiliation:
Physics Department, Wright State University, Dayton OH 45435
D. C. Look
Affiliation:
Physics Department, Wright State University, Dayton OH 45435
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Abstract

The well-known 0.15-eV Hall-effect center appearing in bulk, n-type GaAs quenches under IR illumination and recovers via an Auger-like process at a rate similar to the Auger rate of EL2. On the other hand, the 0.15-eV VAs-related center produced by 1-MeV electron irradiation does not quench at all. Based on these data and a detailed theoretical analysis by Baraff and Schluter, we argue that the bulk 0.15-eV center is related to the AsGa-VAs defect or a related complex.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 431
Copyright
Copyright © Materials Research Society 1994

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