Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-19T19:40:10.378Z Has data issue: false hasContentIssue false
  • English
  • Français

Ideal Crystal Growth from Kink Sites and Fractional-Layer Growth on GaAs Vicinal Substrate by MOCVD

Published online by Cambridge University Press:  16 February 2011

Takashi Fukui  and
Hisao Saito
Takashi Fukui
Affiliation:
NTT Basic Research Laboratories 3-9-11 Midori-cho, Musashino-shi, Tokyo 180, Japan
Hisao Saito
Affiliation:
NTT Basic Research Laboratories 3-9-11 Midori-cho, Musashino-shi, Tokyo 180, Japan
Get access

Abstract

(AIAs)1/2(GaAs)1/2 fractional-layer superlattices (FLSs) are grown on (001) vicinal substrates by metalorganic chemical vapor deposition. Various kinds of GaAs substrates are used. When the substrate is misoriented to [110] direction by 1.92° and [110] by 0.10°, uniform superlattice periods in a large surface area are observed with a bright field transmission electron microscope (TEM). The results suggest ideal crystal growth from kink sites during MOCVD growth, and the distances between the kink sites are equal.

On a substrate misoriented to [110] by 1.90°, the superlattice periods exhibit an undulation. This shows that kink flow mode growth is not dominant in the [110] direction. On a substrate misoriented to [010[ by 2.0°, no superlattice periods were observed. From the above results, we discuss the growth mechanisms.

Polarization dependent photolumlnescence and optical absorption spectra of FLS were also observed. Electron wave interference devices with lateral periodic potential were fabricated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 53
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Fukui, T. and Saito, H., J. Vac. Sci.& Technol. B4, 1373(1988).CrossRefGoogle Scholar
[2] Gaines, J.M., Petroff, P.M., Kroemer, H., Simes, R.J., Geels, R.S., and English, J.H., J.Vac.Sci.& Technol. B4, 1378(1988).CrossRefGoogle Scholar
[3] Yamaguchi, H. and Horikoshi, Y., Jpn. J. Appl. Phys. 28, L1456(1989).CrossRefGoogle Scholar
[4] Kossel., W. Nach. Ges. Wiss. Gottingen. 135(1927).Google Scholar
[5] Fukui, T. and Salto, H., Jpn. J. Appl. Phys.29, L731(1990).CrossRefGoogle Scholar
[6] Horikoshi, Y.. Oyo Butsuri 59, 27(1990)(in Japanese)Google Scholar
[7] Pashley, M.D., Haberern, K.W., and Gaines, J.M., Appl. Phys. Lett. 58, 406(1991).CrossRefGoogle Scholar
[8] Ando, H., Fukui, T., and Saito, H., Extended Abstracts of the 22nd Conf. on Solid State Devices and Materials, Sendai, Japan, B-4–7(1990).Google Scholar
[9] Kasu, M., Ando, H., Saito, H., and Fukui, T.. Appl. Phys. Lett., to be published.Google Scholar
[10] Tsubaki, K., Honda, T.. Salto., H. and Fukui, T., Appl. Phys. Lett. 58, 376(1991)CrossRefGoogle Scholar