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Hydrothermal Preparation of Ba(Ti,Zr)O3 Thin Films From Ti-Zr Metallic Alloys on Silicon Substrate

Published online by Cambridge University Press:  10 February 2011

Chang-Tai Xia ,
V. M. Fuenzalida  and
R. A. Zarate
Chang-Tai Xia
Affiliation:
Universidad de Chile, Facultad de Ciencias Físicas y Matemáticas Departamento de Física, Casilla 487-3, Santiago, Chile.cxia@cec.uchile.cl
V. M. Fuenzalida
Affiliation:
Universidad de Chile, Facultad de Ciencias Físicas y Matemáticas Departamento de Física, Casilla 487-3, Santiago
R. A. Zarate
Affiliation:
Universidad de Chile, Facultad de Ciencias Físicas y Matemáticas Departamento de Física, Casilla 487-3, Santiago
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Abstract

Ba(Ti,Zr)O3 thin films were grown hydrothermally on silicon substrates coated with sputtered a Ti-34 at.%Zr metallic alloy thin film. To ensure the formation of Ba(Ti,Zr)O3 under the hydrothermal conditions at 150°C, the concentration of the Ba(OH)2 had to be greater than 0.25 M. Preliminary capacitance measurement revealed a dielectric constant of 200 in Ba(Ti,Zr)O3 films of approximately 320 nm. The formation mechanism is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 179
Copyright
Copyright © Materials Research Society 2000

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