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Hydrogenated Amorphous Silicon / ZnO Shottky Heterojunction for Position Sensitive Detectors

Published online by Cambridge University Press:  17 March 2011

H. ǵuas ,
P. Nunes ,
E. Fortunato ,
R. Silva ,
V. Silva ,
J. Figueiredo ,
F. Soares  and
R. Martins
H. ǵuas
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
P. Nunes
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
E. Fortunato
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
R. Silva
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
V. Silva
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
J. Figueiredo
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
F. Soares
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
R. Martins
Affiliation:
Departamento de Ci̸ncia dos Materiais, Faculdade de Ci̸ncias e Tecnologia, Universidade Nova de Lisboa, 2825-114 Caparica –, PORTUGAL
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Abstract

In this work a new structure is proposed for position sensitive detectors consisting of glass/Cr/a-Si:H(n+)/a-Si:H(i)/ZnO, where the ZnO forms an heterojunction with the a-Si:H(i). The results show that this structure works with success in the fabrication of linear position sensitive detectors. The devices present a good nonlinearity of ͌ 2% and a good sensitivity tothe light intensity. The main advantages of this structure over the classical p-i-n are an easier to built topology and a higher yield due to a better immunity to the a-Si:H pinholes, since the ZnO does not diffuse so easily into a-Si:H as the metal does, which are the cause of frequent failure in the p-i-n devices due to short-circuits caused by the deposition of the metal over the a-Si:H. In this structure the illumination is made directly on the ZnO, so a transparent substrate is not needed and a larger range of substrates can be used.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A26.6
Copyright
Copyright © Materials Research Society 2000

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References

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