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Hydrogen Assisted Remote Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Nitride Films

Published online by Cambridge University Press:  15 February 2011

P. Santos-Filho ,
K. Koh ,
G. Stevens  and
G. Lucovsky
P. Santos-Filho
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
K. Koh
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Stevens
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

We show that in the RPECVD process the addition of a small upstream flow of H2 gas, combined with the He injected into the plasma region of the reactor, promotes chemical exchange between H and D when the material was deposited from deuterated Silane and ammonia and densifies the a- Si:N:H network. We have deposited hydrogenated stoichiometric nitrides with and without H2 injected into the plasma region. For small H2 flows, the deuterated samples show Fourier transform infrared (FTIR) N-D and N-H stretching and bending modes that interchange their populations, as the total bonded hydrogen content in the films remain constant. The hydrogen assisted grown films show, for small H2 flows, a constant amount of bonded-H, an optical index of refraction n=1.85, and reduced etch rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 57
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Stevens, G., Santos-Filho, P., Habermehl, S., and Lucovsky, G., MRS, 1995 Spring Meeting, Proceedings of the Conference (1995)Google Scholar
2. Fitch, John, Ph.D. Thesis, N. C. State University, (1990)Google Scholar
3. Ma, Y., Ph.D. thesis, North Carolina State University (1993)Google Scholar
4. Santos-Filho, P., Stevens, G., Koh, K., Lu, Z., and Lucovsky, G., MRS, 1995 Fall Meeting, Proceedings of the Conference, section C6.3, (1995)Google Scholar
5. Lu, Z., Santos-Filho, P., Stevens, G., Williams, M., and Lucovsky, G. Journal of Vacuum Technology, A13, (1995)Google Scholar
6. Adams, A. C., Solid State Technol., 26, 135, (1983)Google Scholar
7. Tsu, D. V., Ph.D. Thesis, N. C. State University, (1989)Google Scholar
8. Santos-Filho, P., Stevens, G., Lucovsky, G., Cull, T., Fedders, P., Leopold, D., and Norberg, R. Journal of Non Crystalline Solids, December Issue, (1995)Google Scholar