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Hybrid Integrated Microphotonics and It's Applications

Published online by Cambridge University Press:  15 March 2011

Suntae Jung
Affiliation:
Photonics Solution Laboratory, Telecommunication R&D Center, Samsung Electronics Co., Ltd. Dong Suwon P.O. Box 105, Suwon City, Korea 442-600
Taeil Kim
Affiliation:
Photonics Solution Laboratory, Telecommunication R&D Center, Samsung Electronics Co., Ltd. Dong Suwon P.O. Box 105, Suwon City, Korea 442-600
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Abstract

Hybrid Integration of passive and opto-electronic devices is emerging as a key technology of optical component, because it can increase functionality and reliability of optical device module, lowers the packaging cost and enables automated manufacturing. Main applications of hybrid integrated microphotonic devices are FTTH system and metro access network.

There are various technical issues in hybrid integration modules. It requires connecting an active device to a passive waveguide. The embedded functional devices such as grating, coupler, switch and filter are essential elements to improve optical performance of integrated devices. The package solution for low cost and small size is also required.

We have developed SSC LD(Spot Size Converted Laser Diode) and RMF PD(Reflection Mirror Facet Photo Diode) for connecting to planar waveguide. Simple and cost-effective silica PLC platform with terraced-silica, PLC grating and coupler have been developed. Using these technologies, we have made bi-directional diplexer, triplexer and ECL(External Cavity Laser).

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

1. Yamada, Y. et al. , Optical Engineering 28, 12811287 (1989).Google Scholar
2. Henry, C. H., Blonder, G. E., Kazarinov, R. F., IEEE J. Lightwave Technol. LT–7, 15301539 (1989).Google Scholar
3. Pavesi, L., J. Phy.:Condens. Matter 15, R1169–R1196 (2003).Google Scholar
4. Wong, H., PROC. 23rd International Conference on Microelectronics 1, 285292 (2002).Google Scholar
5. Yamada, Y. et al. , Electron. Lett. 29, 444445 (1993).Google Scholar
6. Yang, S., Kang, H., Jeon, B., Rhee, D., Kim, Y., Lee, E., Choo, A., Burm, J. and Kim, T., ECOC'03, Rimini, Italy, We4.P.80 (2003).Google Scholar
7. Ladouceur, F. and Labeye, P., IEEE J. Lightwave Technol. 13, 481492 (1995).Google Scholar
8. Erdogan, T., IEEE J. Lightwave Technol. 15, 12771294 (1997).Google Scholar
9. Tohmori, Y., Suzaki, Y., Oohashi, H., Sakai, Y., Kondo, Y., Okamoto, H., Okamoto, M., Kadota, Y., Mitomi, O., Itaya, Y., and Sugie, T., Electron. Lett. 12, 18381840 (1995).Google Scholar
10. Gall, F. L., Mottet, S., Devoldere, N., and Landreau, J., ECOC'98, Madrid, Spain, 285286 (1998).Google Scholar