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HVEM and Electrical Characterisation of SIMOX Structures
Published online by Cambridge University Press: 28 February 2011
Abstract
This paper reports on a study of the Silicon-On-Insulator (SOI) structures obtained by oxygen ion implantation (SIMOX) and subsequent thermal annealing. With Transmission Electron Microscopy (TEM) a novel defect structure is revealed in the case of low temperature annealings. Electrical measurements of test devices are performed and a correlation with impurity decoration of defects is investigated.
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- Copyright © Materials Research Society 1988