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Hrtem Investigation of Effect of Various Rare Earth Oxide Dopants on Epitaxial Zirconia High-K Gate Dielectrics

Published online by Cambridge University Press:  11 February 2011

Takanori Kiguchi ,
Naoki Wakiya ,
Kazuo Shinozaki  and
Nobuyasu Mzutani
Takanori Kiguchi
Affiliation:
Center for Advanced Materials Analysis, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan
Naoki Wakiya
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, Japan
Kazuo Shinozaki
Affiliation:
Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, Japan
Nobuyasu Mzutani
Affiliation:
Center for Advanced Materials Analysis, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8550, Japan Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2–12–1, O-okayama, Meguro-ku, Tokyo 152–8552, Japan
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Abstract

The effects of several rare earth oxide on the capacitance-voltage (C-V) characteristics and the SiO2 interlayer growth of ZrO2 based gate dielectrics were examined. The width of the hysteresis window of La2O3 stabilized ZrO2 (LaSZ) gate dielectric was only 0.2V, on the other hands, that of Sc2O3 stabilized ZrO2 (ScSZ) gate dielectric was 1.4V HRTEM analysis indicated that the growth of SiO2 interlayer of RSZ (R=Sm,Nd,La) gate dielectric was about 1nm, which was less than half of the ScSZ one. These results indicate the advantage of the ZrO2 gate dielectric doped with rare earth oxide composed of larger ionic radius cation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 745: Symposium N – Novel Materials and Processes for Advanced CMOS , 2002 , N9.7/T7.7
Copyright
Copyright © Materials Research Society 2003

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References

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